Resistive switching memory of single BiMnO3+δ nanorods

Yongming Yan; Bai Sun; De Jian Ma

doi:10.1007/s10854-015-3782-9

Resistive switching memory of single BiMnO_3+δ nanorods

Yongming Yan
, Bai Sun
, De Jian Ma

Hunan University
Southwest University

科研成果: 期刊稿件 › 文章 › 同行评审

14 引用（Scopus）

摘要

In this work, BiMnO_3+δ nanorods were prepared by an improved hydrothermal process. Further, we demonstrate the bipolar resistive switching memory behavior of single BiMnO_3+δ nanorods. The physical model of conducting filament formation due to the diffusion of Ag ions along the BiMnO_3+δ nanorods under electric field has been suggested to explain the bipolar resistive switching behavior. This study is useful for developing the nonvolatile memory technology in nanoscale.

源语言	英语
页（从-至）	512-516
页数	5
期刊	Journal of Materials Science: Materials in Electronics
卷	27
期	1
DOI	https://doi.org/10.1007/s10854-015-3782-9
出版状态	已出版 - 1 1月 2016
已对外发布	是

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AB - In this work, BiMnO3+δ nanorods were prepared by an improved hydrothermal process. Further, we demonstrate the bipolar resistive switching memory behavior of single BiMnO3+δ nanorods. The physical model of conducting filament formation due to the diffusion of Ag ions along the BiMnO3+δ nanorods under electric field has been suggested to explain the bipolar resistive switching behavior. This study is useful for developing the nonvolatile memory technology in nanoscale.

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Resistive switching memory of single BiMnO3+δ nanorods

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Resistive switching memory of single BiMnO_3+δ nanorods