Resistive switching memory characteristics of single MoSe₂ nanorods

Resistive switching memory effect in metal-oxide-metal structures is a fascinating phenomenon toward next generation universal nonvolatile memories. Herein, the MoSe₂ nanorods were prepared by hydrothermal method. Further, a resistive switching memory device of single MoSe₂ nanorods is demonstrated. The device presents stable resistive switching memory behaviors with on-off ratio (memory window) of ∼50 at room temperature. Moreover, the origin of switching behavior in these devices on the basis of formation and annihilation of conducting filaments is addressed. This study is useful for exploring the multifunctional materials and their applications in nonvolatile memory devices.