Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture

Guangdong Zhou; Bai Sun; Zhijun Ren; Lidan Wang; Cunyun Xu; Bo Wu; Ping Li; Yanqing Yao; Shukai Duan

doi:10.1039/c9cc04069b

Resistive switching behaviors and memory logic functions in single MnO_x nanorod modulated by moisture

Guangdong Zhou
, Bai Sun
, Zhijun Ren
, Lidan Wang
, Cunyun Xu
, Bo Wu
, Ping Li
, Yanqing Yao
, Shukai Duan

Guizhou Institute of Technology
Southwest University
Southwest Jiaotong University
Zunyi Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

58 引用（Scopus）

摘要

A device with the lateral structure of AgMnO_xAg was developed using a single MnO_x nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.

源语言	英语
页（从-至）	9915-9918
页数	4
期刊	Chemical Communications
卷	55
期	67
DOI	https://doi.org/10.1039/c9cc04069b
出版状态	已出版 - 2019
已对外发布	是

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10.1039/c9cc04069b

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abstract = "A device with the lateral structure of AgMnOxAg was developed using a single MnOx nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.",

author = "Guangdong Zhou and Bai Sun and Zhijun Ren and Lidan Wang and Cunyun Xu and Bo Wu and Ping Li and Yanqing Yao and Shukai Duan",

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AU - Zhou, Guangdong

AU - Sun, Bai

AU - Ren, Zhijun

AU - Wang, Lidan

AU - Xu, Cunyun

AU - Wu, Bo

AU - Li, Ping

AU - Yao, Yanqing

AU - Duan, Shukai

PY - 2019

Y1 - 2019

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AB - A device with the lateral structure of AgMnOxAg was developed using a single MnOx nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.

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DO - 10.1039/c9cc04069b

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JO - Chemical Communications

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Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture

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Resistive switching behaviors and memory logic functions in single MnO_x nanorod modulated by moisture