Reactive ion etching of sol-gel-derived BST thin film

Peng Shi; Xi Yao; Liangying Zhang

doi:10.1016/j.ceramint.2003.12.125

Reactive ion etching of sol-gel-derived BST thin film

Peng Shi
, Xi Yao
, Liangying Zhang

电子与信息学部

Xi'an Jiaotong University

科研成果: 期刊稿件 › 会议文章 › 同行评审

16 引用（Scopus）

摘要

Perovskite (Ba,Sr)TiO₃ (BST) thin film is promising dielectric and ferroelectric material for future generation integrated DRAMs, MEMS, and other devices. The etching properties of BST films were widely concerned. The etching characteristics of sol-gel-derived BST films were investigated in a reactive ion etching (RIE) setup using CHF₃/Ar plasma. The morphology and etching rate were measured by atomic force microscopy (AFM). The surface states of each element in BST films were examined by X-ray photoelectron spectroscopy (XPS). The etching mechanism of BST thin film in RIE was the cooperation of ion bombardment, ions assist chemical reaction and reaction etching effects. The highest etching rate of BST films was 5.1nm/min.

源语言	英语
页（从-至）	1513-1516
页数	4
期刊	Ceramics International
卷	30
期	7
DOI	https://doi.org/10.1016/j.ceramint.2003.12.125
出版状态	已出版 - 2004
活动	3rd Asian Meeting on Electroceramics - Singapore, 新加坡期限: 7 12月 2003 → 11 12月 2003

访问文件

10.1016/j.ceramint.2003.12.125

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{9b61ea56f5d145009776f6bb5c4ea765,

title = "Reactive ion etching of sol-gel-derived BST thin film",

abstract = "Perovskite (Ba,Sr)TiO3 (BST) thin film is promising dielectric and ferroelectric material for future generation integrated DRAMs, MEMS, and other devices. The etching properties of BST films were widely concerned. The etching characteristics of sol-gel-derived BST films were investigated in a reactive ion etching (RIE) setup using CHF3/Ar plasma. The morphology and etching rate were measured by atomic force microscopy (AFM). The surface states of each element in BST films were examined by X-ray photoelectron spectroscopy (XPS). The etching mechanism of BST thin film in RIE was the cooperation of ion bombardment, ions assist chemical reaction and reaction etching effects. The highest etching rate of BST films was 5.1nm/min.",

keywords = "BST, CHF, RIE, Sol-gel, Thin Film",

author = "Peng Shi and Xi Yao and Liangying Zhang",

year = "2004",

doi = "10.1016/j.ceramint.2003.12.125",

language = "英语",

volume = "30",

pages = "1513--1516",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Ltd",

number = "7",

note = "3rd Asian Meeting on Electroceramics ; Conference date: 07-12-2003 Through 11-12-2003",

}

TY - JOUR

T1 - Reactive ion etching of sol-gel-derived BST thin film

AU - Shi, Peng

AU - Yao, Xi

AU - Zhang, Liangying

PY - 2004

Y1 - 2004

N2 - Perovskite (Ba,Sr)TiO3 (BST) thin film is promising dielectric and ferroelectric material for future generation integrated DRAMs, MEMS, and other devices. The etching properties of BST films were widely concerned. The etching characteristics of sol-gel-derived BST films were investigated in a reactive ion etching (RIE) setup using CHF3/Ar plasma. The morphology and etching rate were measured by atomic force microscopy (AFM). The surface states of each element in BST films were examined by X-ray photoelectron spectroscopy (XPS). The etching mechanism of BST thin film in RIE was the cooperation of ion bombardment, ions assist chemical reaction and reaction etching effects. The highest etching rate of BST films was 5.1nm/min.

AB - Perovskite (Ba,Sr)TiO3 (BST) thin film is promising dielectric and ferroelectric material for future generation integrated DRAMs, MEMS, and other devices. The etching properties of BST films were widely concerned. The etching characteristics of sol-gel-derived BST films were investigated in a reactive ion etching (RIE) setup using CHF3/Ar plasma. The morphology and etching rate were measured by atomic force microscopy (AFM). The surface states of each element in BST films were examined by X-ray photoelectron spectroscopy (XPS). The etching mechanism of BST thin film in RIE was the cooperation of ion bombardment, ions assist chemical reaction and reaction etching effects. The highest etching rate of BST films was 5.1nm/min.

KW - BST

KW - CHF

KW - RIE

KW - Sol-gel

KW - Thin Film

UR - https://www.scopus.com/pages/publications/4344640072

U2 - 10.1016/j.ceramint.2003.12.125

DO - 10.1016/j.ceramint.2003.12.125

M3 - 会议文章

AN - SCOPUS:4344640072

SN - 0272-8842

VL - 30

SP - 1513

EP - 1516

JO - Ceramics International

JF - Ceramics International

IS - 7

T2 - 3rd Asian Meeting on Electroceramics

Y2 - 7 December 2003 through 11 December 2003

ER -

Reactive ion etching of sol-gel-derived BST thin film

摘要

访问文件

其它文件与链接

学术指纹

引用此