TY - JOUR
T1 - Rare earth chloride Compositing and multiscale structure lead to high thermoelectric performance in p-type Cu3SbSe4
AU - Han, Haiwei
AU - Zhao, Lijun
AU - Wu, Xinmeng
AU - Feng, Qibiao
AU - Li, Tao
AU - Yu, Lihua
AU - Yang, Jian
AU - Ge, Bangzhi
AU - Shi, Zhongqi
AU - Qiao, Guanjun
AU - Xu, Junhua
N1 - Publisher Copyright:
© 2024 Elsevier Ltd
PY - 2024/12
Y1 - 2024/12
N2 - Cu3SbSe4 is a promising Te-free p-type thermoelectric material, characterized by earth-abundant, low-cost, and environmentally friendly constituents. Nonetheless, its thermoelectric performance is poor due to its extremely low electrical conductivity (deriving from the low carrier concentration) and high lattice thermal conductivity. Herein, we report a high-performance Cu3SbSe4-based material by compositing LaCl3 and introducing multiscale structure. The LaCl3-composted Cu3SbSe4 forms heterojunctions that facilitate charge accumulation at the interfaces. The redistribution of electrons between the two materials increases the electrical conductivity without damaging the Seebeck coefficient, and thereby significantly improving the power factor to ∼1150 μWm−1K−2 for Cu3SbSe4-based bulk. Furthermore, the hierarchical architecture defects are induced by LaCl3 compositing, yielding a minimum κlat of ∼0.68 Wm−1K−1 at 673 K. As a consequence, a maximum ZT value of ∼0.90 at 673 K is achieved in the Cu3SbSe4 +2 mol% LaCl3 sample, representing an 80 % improvement compared to the pristine Cu3SbSe4.
AB - Cu3SbSe4 is a promising Te-free p-type thermoelectric material, characterized by earth-abundant, low-cost, and environmentally friendly constituents. Nonetheless, its thermoelectric performance is poor due to its extremely low electrical conductivity (deriving from the low carrier concentration) and high lattice thermal conductivity. Herein, we report a high-performance Cu3SbSe4-based material by compositing LaCl3 and introducing multiscale structure. The LaCl3-composted Cu3SbSe4 forms heterojunctions that facilitate charge accumulation at the interfaces. The redistribution of electrons between the two materials increases the electrical conductivity without damaging the Seebeck coefficient, and thereby significantly improving the power factor to ∼1150 μWm−1K−2 for Cu3SbSe4-based bulk. Furthermore, the hierarchical architecture defects are induced by LaCl3 compositing, yielding a minimum κlat of ∼0.68 Wm−1K−1 at 673 K. As a consequence, a maximum ZT value of ∼0.90 at 673 K is achieved in the Cu3SbSe4 +2 mol% LaCl3 sample, representing an 80 % improvement compared to the pristine Cu3SbSe4.
KW - CuSbSe-based materials
KW - LaCl compositing
KW - Multiscale structure
KW - Rare earth element
KW - Thermoelectric performance
UR - https://www.scopus.com/pages/publications/85205905510
U2 - 10.1016/j.vacuum.2024.113712
DO - 10.1016/j.vacuum.2024.113712
M3 - 文章
AN - SCOPUS:85205905510
SN - 0042-207X
VL - 230
JO - Vacuum
JF - Vacuum
M1 - 113712
ER -