TY - JOUR
T1 - Rapid fabrication of electrohydrodynamic micro-/nanostructures with high aspect ratio using a leaky dielectric photoresist
AU - Lv, Guowei
AU - Zhang, Shihu
AU - Shao, Jinyou
AU - Wang, Guolong
AU - Tian, Hongmiao
AU - Yu, Demei
N1 - Publisher Copyright:
© 2017 Elsevier B.V.
PY - 2017/9
Y1 - 2017/9
N2 - A leaky dielectric photoresist was designed and prepared for rapid fabrication of high-aspect-ratio micro-/nanostructures via electrohydrodynamic patterning (EHDP). The rheological behavior and electrical properties of the photoresists were systematically investigated, since the structure formation in EHDP essentially originates from the flow and deformation of the polymeric film actuated by an applied electric field. It is found that the photoresists exhibit the suitable rheological behavior with a low viscosity of 2.4–157.7 mPa s, controllable electrical conductivity of 5.0 × 10− 6 − 7.2 × 10− 4 S m− 1, as well as high homogeneity, minor surface tension of about 30 mN·m− 1, favorable wettability and film-forming property on substrate and an extremely large reduction in the contact angle (down to 1.64°) of electrowetting on dielectric (EWOD). The EHDP results have shown that a higher electrical conductivity of the photoresists can lead to a higher filling height, a smaller characteristic wavelength and a shorter patterning time, while a lower viscosity can also lead to a shorter patterning time, which is accordance with the theoretical prediction. In addition, the patterning time of the photoresists cannot be too short because the following rapid ripening and coalescence of the formed microstructure will damage the high fidelity of the final pillar arrays.
AB - A leaky dielectric photoresist was designed and prepared for rapid fabrication of high-aspect-ratio micro-/nanostructures via electrohydrodynamic patterning (EHDP). The rheological behavior and electrical properties of the photoresists were systematically investigated, since the structure formation in EHDP essentially originates from the flow and deformation of the polymeric film actuated by an applied electric field. It is found that the photoresists exhibit the suitable rheological behavior with a low viscosity of 2.4–157.7 mPa s, controllable electrical conductivity of 5.0 × 10− 6 − 7.2 × 10− 4 S m− 1, as well as high homogeneity, minor surface tension of about 30 mN·m− 1, favorable wettability and film-forming property on substrate and an extremely large reduction in the contact angle (down to 1.64°) of electrowetting on dielectric (EWOD). The EHDP results have shown that a higher electrical conductivity of the photoresists can lead to a higher filling height, a smaller characteristic wavelength and a shorter patterning time, while a lower viscosity can also lead to a shorter patterning time, which is accordance with the theoretical prediction. In addition, the patterning time of the photoresists cannot be too short because the following rapid ripening and coalescence of the formed microstructure will damage the high fidelity of the final pillar arrays.
KW - Electrical property
KW - High aspect ratio
KW - Leaky dielectric photoresist
KW - Rapid electrohydrodynamic patterning
KW - Rheological behavior
UR - https://www.scopus.com/pages/publications/85021421084
U2 - 10.1016/j.reactfunctpolym.2017.06.014
DO - 10.1016/j.reactfunctpolym.2017.06.014
M3 - 文章
AN - SCOPUS:85021421084
SN - 1381-5148
VL - 118
SP - 1
EP - 9
JO - Reactive and Functional Polymers
JF - Reactive and Functional Polymers
ER -