Radio frequency siliconization: An approach to the coating for the future large superconducting fusion devices

J. Li; Y. P. Zhao; B. N. Wan; X. Z. Gong; M. Zhen; X. M. Gu; X. D. Zhang; J. R. Luo; Y. X. Wan; J. K. Xie; C. F. Li; J. L. Chen; K. Toi; N. Noda; T. Watari

doi:10.1116/1.1376712

Radio frequency siliconization: An approach to the coating for the future large superconducting fusion devices

J. Li
, Y. P. Zhao
, B. N. Wan
, X. Z. Gong
, M. Zhen
, X. M. Gu
, X. D. Zhang
, J. R. Luo
, Y. X. Wan
, J. K. Xie
, C. F. Li
, J. L. Chen
, K. Toi
, N. Noda
, T. Watari

电气工程学院

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Radio frequency (rf) siliconization was tested on the superconducting tokamak in the presence of high magnetic field. A stable region was obtained and plasma performance was improved after each siliconization due to reduction in impurities. Particle confinement time increased by a factor of two and energy confinement time increased more than 50%. Results showed that the confinement improvement is due to the reduction of the electron thermal diffusivity in the plasma.

源语言	英语
页（从-至）	2149-2154
页数	6
期刊	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
卷	19
期	5
DOI	https://doi.org/10.1116/1.1376712
出版状态	已出版 - 9月 2001

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10.1116/1.1376712

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Li, J., Zhao, Y. P., Wan, B. N., Gong, X. Z., Zhen, M., Gu, X. M., Zhang, X. D., Luo, J. R., Wan, Y. X., Xie, J. K., Li, C. F., Chen, J. L., Toi, K., Noda, N., & Watari, T. (2001). Radio frequency siliconization: An approach to the coating for the future large superconducting fusion devices. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 19(5), 2149-2154. https://doi.org/10.1116/1.1376712

@article{197326d7d58149fd9a7d185e9f796229,

title = "Radio frequency siliconization: An approach to the coating for the future large superconducting fusion devices",

abstract = "Radio frequency (rf) siliconization was tested on the superconducting tokamak in the presence of high magnetic field. A stable region was obtained and plasma performance was improved after each siliconization due to reduction in impurities. Particle confinement time increased by a factor of two and energy confinement time increased more than 50\%. Results showed that the confinement improvement is due to the reduction of the electron thermal diffusivity in the plasma.",

author = "J. Li and Zhao, \{Y. P.\} and Wan, \{B. N.\} and Gong, \{X. Z.\} and M. Zhen and Gu, \{X. M.\} and Zhang, \{X. D.\} and Luo, \{J. R.\} and Wan, \{Y. X.\} and Xie, \{J. K.\} and Li, \{C. F.\} and Chen, \{J. L.\} and K. Toi and N. Noda and T. Watari",

year = "2001",

month = sep,

doi = "10.1116/1.1376712",

language = "英语",

volume = "19",

pages = "2149--2154",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "5",

}

Li, J, Zhao, YP, Wan, BN, Gong, XZ, Zhen, M, Gu, XM, Zhang, XD, Luo, JR, Wan, YX, Xie, JK, Li, CF, Chen, JL, Toi, K, Noda, N & Watari, T 2001, 'Radio frequency siliconization: An approach to the coating for the future large superconducting fusion devices', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 卷 19, 号码 5, 页码 2149-2154. https://doi.org/10.1116/1.1376712

TY - JOUR

T1 - Radio frequency siliconization

T2 - An approach to the coating for the future large superconducting fusion devices

AU - Li, J.

AU - Zhao, Y. P.

AU - Wan, B. N.

AU - Gong, X. Z.

AU - Zhen, M.

AU - Gu, X. M.

AU - Zhang, X. D.

AU - Luo, J. R.

AU - Wan, Y. X.

AU - Xie, J. K.

AU - Li, C. F.

AU - Chen, J. L.

AU - Toi, K.

AU - Noda, N.

AU - Watari, T.

PY - 2001/9

Y1 - 2001/9

N2 - Radio frequency (rf) siliconization was tested on the superconducting tokamak in the presence of high magnetic field. A stable region was obtained and plasma performance was improved after each siliconization due to reduction in impurities. Particle confinement time increased by a factor of two and energy confinement time increased more than 50%. Results showed that the confinement improvement is due to the reduction of the electron thermal diffusivity in the plasma.

AB - Radio frequency (rf) siliconization was tested on the superconducting tokamak in the presence of high magnetic field. A stable region was obtained and plasma performance was improved after each siliconization due to reduction in impurities. Particle confinement time increased by a factor of two and energy confinement time increased more than 50%. Results showed that the confinement improvement is due to the reduction of the electron thermal diffusivity in the plasma.

UR - https://www.scopus.com/pages/publications/0035441978

U2 - 10.1116/1.1376712

DO - 10.1116/1.1376712

M3 - 文章

AN - SCOPUS:0035441978

SN - 0734-2101

VL - 19

SP - 2149

EP - 2154

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 5

ER -

Radio frequency siliconization: An approach to the coating for the future large superconducting fusion devices

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