Pulsed laser deposition of epitaxial ferroelectric Pb(Zr,Ti)O3 films on silicon substrates

A. S. Borowiak; G. Niu; V. Pillard; G. Agnus; Ph Lecoeur; D. Albertini; N. Baboux; B. Gautier; B. Vilquin

doi:10.1016/j.tsf.2011.10.139

Pulsed laser deposition of epitaxial ferroelectric Pb(Zr,Ti)O₃ films on silicon substrates

A. S. Borowiak
, G. Niu
, V. Pillard
, G. Agnus
, Ph Lecoeur
, D. Albertini
, N. Baboux
, B. Gautier
, B. Vilquin

科研成果: 期刊稿件 › 文章 › 同行评审

16 引用（Scopus）

摘要

We report on the epitaxial growth and electrical properties of Pb _0.52Zr_0.48TiO₃ (PZT) thin films deposited by Pulsed Laser Deposition (PLD) on SrTiO₃ (STO)-buffered Si(001). Previously to PZT growth, 40 nm-thick (La,Sr)MnO₃ (LSMO) layer was deposited to serve as electrical bottom electrode. The 200 nm-thick PZT film epitaxy was optimized by PLD on STO-buffered Si(001). The high contrast of stable artificially poled ferroelectric surfaces evidences the good ferroelectric properties of the PZT thin film. The structural as well as the physical properties of the PZT/LSMO/STO/Si(001) structure prove that very good quality layers have been obtained for films grown on silicon substrate.

源语言	英语
页（从-至）	4604-4607
页数	4
期刊	Thin Solid Films
卷	520
期	14
DOI	https://doi.org/10.1016/j.tsf.2011.10.139
出版状态	已出版 - 1 5月 2012
已对外发布	是

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10.1016/j.tsf.2011.10.139

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title = "Pulsed laser deposition of epitaxial ferroelectric Pb(Zr,Ti)O3 films on silicon substrates",

abstract = "We report on the epitaxial growth and electrical properties of Pb 0.52Zr0.48TiO3 (PZT) thin films deposited by Pulsed Laser Deposition (PLD) on SrTiO3 (STO)-buffered Si(001). Previously to PZT growth, 40 nm-thick (La,Sr)MnO3 (LSMO) layer was deposited to serve as electrical bottom electrode. The 200 nm-thick PZT film epitaxy was optimized by PLD on STO-buffered Si(001). The high contrast of stable artificially poled ferroelectric surfaces evidences the good ferroelectric properties of the PZT thin film. The structural as well as the physical properties of the PZT/LSMO/STO/Si(001) structure prove that very good quality layers have been obtained for films grown on silicon substrate.",

keywords = "Ferroelectric oxides, Molecular beam epitaxy, Pb(Zr,Ti)O, Piezo Force Microscopy, Pulsed laser deposition, Silicon, Thin film",

author = "Borowiak, \{A. S.\} and G. Niu and V. Pillard and G. Agnus and Ph Lecoeur and D. Albertini and N. Baboux and B. Gautier and B. Vilquin",

year = "2012",

month = may,

day = "1",

doi = "10.1016/j.tsf.2011.10.139",

language = "英语",

volume = "520",

pages = "4604--4607",

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TY - JOUR

T1 - Pulsed laser deposition of epitaxial ferroelectric Pb(Zr,Ti)O3 films on silicon substrates

AU - Borowiak, A. S.

AU - Niu, G.

AU - Pillard, V.

AU - Agnus, G.

AU - Lecoeur, Ph

AU - Albertini, D.

AU - Baboux, N.

AU - Gautier, B.

AU - Vilquin, B.

PY - 2012/5/1

Y1 - 2012/5/1

N2 - We report on the epitaxial growth and electrical properties of Pb 0.52Zr0.48TiO3 (PZT) thin films deposited by Pulsed Laser Deposition (PLD) on SrTiO3 (STO)-buffered Si(001). Previously to PZT growth, 40 nm-thick (La,Sr)MnO3 (LSMO) layer was deposited to serve as electrical bottom electrode. The 200 nm-thick PZT film epitaxy was optimized by PLD on STO-buffered Si(001). The high contrast of stable artificially poled ferroelectric surfaces evidences the good ferroelectric properties of the PZT thin film. The structural as well as the physical properties of the PZT/LSMO/STO/Si(001) structure prove that very good quality layers have been obtained for films grown on silicon substrate.

AB - We report on the epitaxial growth and electrical properties of Pb 0.52Zr0.48TiO3 (PZT) thin films deposited by Pulsed Laser Deposition (PLD) on SrTiO3 (STO)-buffered Si(001). Previously to PZT growth, 40 nm-thick (La,Sr)MnO3 (LSMO) layer was deposited to serve as electrical bottom electrode. The 200 nm-thick PZT film epitaxy was optimized by PLD on STO-buffered Si(001). The high contrast of stable artificially poled ferroelectric surfaces evidences the good ferroelectric properties of the PZT thin film. The structural as well as the physical properties of the PZT/LSMO/STO/Si(001) structure prove that very good quality layers have been obtained for films grown on silicon substrate.

KW - Ferroelectric oxides

KW - Molecular beam epitaxy

KW - Pb(Zr,Ti)O

KW - Piezo Force Microscopy

KW - Pulsed laser deposition

KW - Silicon

KW - Thin film

UR - https://www.scopus.com/pages/publications/84860315216

U2 - 10.1016/j.tsf.2011.10.139

DO - 10.1016/j.tsf.2011.10.139

M3 - 文章

AN - SCOPUS:84860315216

SN - 0040-6090

VL - 520

SP - 4604

EP - 4607

JO - Thin Solid Films

JF - Thin Solid Films

IS - 14

ER -

Pulsed laser deposition of epitaxial ferroelectric Pb(Zr,Ti)O3 films on silicon substrates

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Pulsed laser deposition of epitaxial ferroelectric Pb(Zr,Ti)O₃ films on silicon substrates