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Properties of plt thin films by thermal decomposition of metalloorganic compounds

  • Wei Ren
  • , Yun Liu
  • , Jihui Qiu
  • , Liangying Zhang
  • , Xi Yao
  • Xi'an Jiaotong University

科研成果: 期刊稿件文章同行评审

16 引用 (Scopus)

摘要

The PLT thin films on silicon substrate were prepared by MOD method. The relationship of dielectric constants and loss tangent with annealing temperatures and La content were investigated. Curie temperatures of PLT films decrease linearly at a rate of -17°C/mol% with increasing of La content. Ps, Pr and Ec of the films were studied by P-E hysteresis loops. Large Pr value of 19.61nC/cm2 has been achieved in PLT5 films, while Ec is 164KV/cm, which is much higher than that of bulk materials.

源语言英语
页(从-至)201-206
页数6
期刊Ferroelectrics
152
1
DOI
出版状态已出版 - 2月 1994

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