摘要
The PLT thin films on silicon substrate were prepared by MOD method. The relationship of dielectric constants and loss tangent with annealing temperatures and La content were investigated. Curie temperatures of PLT films decrease linearly at a rate of -17°C/mol% with increasing of La content. Ps, Pr and Ec of the films were studied by P-E hysteresis loops. Large Pr value of 19.61nC/cm2 has been achieved in PLT5 films, while Ec is 164KV/cm, which is much higher than that of bulk materials.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 201-206 |
| 页数 | 6 |
| 期刊 | Ferroelectrics |
| 卷 | 152 |
| 期 | 1 |
| DOI | |
| 出版状态 | 已出版 - 2月 1994 |
学术指纹
探究 'Properties of plt thin films by thermal decomposition of metalloorganic compounds' 的科研主题。它们共同构成独一无二的学术指纹。引用此
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