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Probing orbital ordering in LaVO3 epitaxial films by Raman scattering

  • I. Vrejoiu
  • , C. Himcinschi
  • , L. Jin
  • , C. L. Jia
  • , N. Raab
  • , J. Engelmayer
  • , R. Waser
  • , R. Dittmann
  • , P. H.M. Van Loosdrecht
  • University of Cologne
  • Freiberg University of Mining and Technology
  • Jülich Research Centre

科研成果: 期刊稿件 › 文章 › 同行评审

13 引用 (Scopus)

摘要

Single crystals of Mott-Hubbard insulator LaVO3 exhibit spin and orbital ordering along with a structural change below ≈140 K. The occurrence of orbital ordering in epitaxial LaVO3 films has, however, been little investigated. By temperature-dependent Raman scattering spectroscopy, we probed and evidenced the transition to orbital ordering in epitaxial LaVO3 film samples fabricated by pulsed-laser deposition. This opens up the possibility to explore the influence of different epitaxial strain (compressive vs. tensile) and of epitaxy-induced distortions of oxygen octahedra on the orbital ordering, in epitaxial perovskite vanadate films.

源语言英语
期刊论文编号046103
期刊APL Materials
卷4
期4
DOI
出版状态已出版 - 4月 2016
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