Preparation of hafnium oxide thin films by sol-gel method

Z. J. Wang; T. Kumagai; H. Kokawa; M. Ichiki; R. Maeda

doi:10.1007/s10832-007-9228-x

Preparation of hafnium oxide thin films by sol-gel method

Z. J. Wang
, T. Kumagai
, H. Kokawa
, M. Ichiki
, R. Maeda

Tohoku University
National Institute of Advanced Industrial Science and Technology

科研成果: 期刊稿件 › 文章 › 同行评审

25 引用（Scopus）

摘要

Hafnium oxide (HfO₂) films were grown on SiO₂/Si substrates by a sol-gel method, and their crystalline structure, microstructure and electrical properties were investigated. X-ray diffraction analysis indicated that the monoclinic HfO₂ films could be obtained by annealing at 500 °C. A transmission electron microscopy (TEM) image showed that the films were grown as a spherulite grain structure with a mean grain size of approximately 15 nm. The dielectric constant of the HfO₂ films of 300 nm was approximately 21.6, and the current-voltage measurements showed that the leakage current density of the HfO₂ films was approximately 1.14∈×∈10^-5 A/cm² at an applied electric field of 100 kV/cm. The sol-gel method-fabricated HfO₂ films are concluded to be feasible for MEMS applications, such as capacitive-type MEMS switches.

源语言	英语
页（从-至）	499-502
页数	4
期刊	Journal of Electroceramics
卷	21
期	1-4 SPEC. ISS.
DOI	https://doi.org/10.1007/s10832-007-9228-x
出版状态	已出版 - 12月 2008
已对外发布	是

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title = "Preparation of hafnium oxide thin films by sol-gel method",

abstract = "Hafnium oxide (HfO2) films were grown on SiO2/Si substrates by a sol-gel method, and their crystalline structure, microstructure and electrical properties were investigated. X-ray diffraction analysis indicated that the monoclinic HfO2 films could be obtained by annealing at 500 °C. A transmission electron microscopy (TEM) image showed that the films were grown as a spherulite grain structure with a mean grain size of approximately 15 nm. The dielectric constant of the HfO2 films of 300 nm was approximately 21.6, and the current-voltage measurements showed that the leakage current density of the HfO2 films was approximately 1.14∈×∈10-5 A/cm2 at an applied electric field of 100 kV/cm. The sol-gel method-fabricated HfO2 films are concluded to be feasible for MEMS applications, such as capacitive-type MEMS switches.",

keywords = "Crystalline structure, Electrical properties, Hafnium oxide, Microstructure, Thin film",

author = "Wang, \{Z. J.\} and T. Kumagai and H. Kokawa and M. Ichiki and R. Maeda",

year = "2008",

month = dec,

doi = "10.1007/s10832-007-9228-x",

language = "英语",

volume = "21",

pages = "499--502",

journal = "Journal of Electroceramics",

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TY - JOUR

T1 - Preparation of hafnium oxide thin films by sol-gel method

AU - Wang, Z. J.

AU - Kumagai, T.

AU - Kokawa, H.

AU - Ichiki, M.

AU - Maeda, R.

PY - 2008/12

Y1 - 2008/12

N2 - Hafnium oxide (HfO2) films were grown on SiO2/Si substrates by a sol-gel method, and their crystalline structure, microstructure and electrical properties were investigated. X-ray diffraction analysis indicated that the monoclinic HfO2 films could be obtained by annealing at 500 °C. A transmission electron microscopy (TEM) image showed that the films were grown as a spherulite grain structure with a mean grain size of approximately 15 nm. The dielectric constant of the HfO2 films of 300 nm was approximately 21.6, and the current-voltage measurements showed that the leakage current density of the HfO2 films was approximately 1.14∈×∈10-5 A/cm2 at an applied electric field of 100 kV/cm. The sol-gel method-fabricated HfO2 films are concluded to be feasible for MEMS applications, such as capacitive-type MEMS switches.

AB - Hafnium oxide (HfO2) films were grown on SiO2/Si substrates by a sol-gel method, and their crystalline structure, microstructure and electrical properties were investigated. X-ray diffraction analysis indicated that the monoclinic HfO2 films could be obtained by annealing at 500 °C. A transmission electron microscopy (TEM) image showed that the films were grown as a spherulite grain structure with a mean grain size of approximately 15 nm. The dielectric constant of the HfO2 films of 300 nm was approximately 21.6, and the current-voltage measurements showed that the leakage current density of the HfO2 films was approximately 1.14∈×∈10-5 A/cm2 at an applied electric field of 100 kV/cm. The sol-gel method-fabricated HfO2 films are concluded to be feasible for MEMS applications, such as capacitive-type MEMS switches.

KW - Crystalline structure

KW - Electrical properties

KW - Hafnium oxide

KW - Microstructure

KW - Thin film

UR - https://www.scopus.com/pages/publications/67651114126

U2 - 10.1007/s10832-007-9228-x

DO - 10.1007/s10832-007-9228-x

M3 - 文章

AN - SCOPUS:67651114126

SN - 1385-3449

VL - 21

SP - 499

EP - 502

JO - Journal of Electroceramics

JF - Journal of Electroceramics

IS - 1-4 SPEC. ISS.

ER -

Preparation of hafnium oxide thin films by sol-gel method

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