Preparation and properties of ultra low K porous silica films modified by trimethylchlorosilane (TMCS)

Zhao Fengguo; Wu Xiaoqing; Ren Wei; Chen Xiaofeng; Shi Peng; Yao Xi

doi:10.1080/00150193.2010.484673

Preparation and properties of ultra low K porous silica films modified by trimethylchlorosilane (TMCS)

Zhao Fengguo
, Wu Xiaoqing
, Ren Wei
, Chen Xiaofeng
, Shi Peng
, Yao Xi

电子与信息学部

Xi'an Jiaotong University

科研成果: 期刊稿件 › 会议文章 › 同行评审

2 引用（Scopus）

摘要

SiO₂ porous thin films were prepared using polyvinyl alcohol as a template. Trimethylchlorosilane (TMCS) was used as modification reagent. The effects of TMCS concentration and modification time on dielectric property and morphology were investigated. The dielectric constant and loss of the SiO ₂ porous thin films decreased with the increases of modification time and TMCS concentration. When the concentration of used TMCS and modification time are 60% and 2 hours, the dielectric constant of porous silica can be lowered to 1.86. AFM analysis shows that the silica films before and after modification possess similar microstructure.

源语言	英语
页（从-至）	221-227
页数	7
期刊	Ferroelectrics
卷	406
期	1
DOI	https://doi.org/10.1080/00150193.2010.484673
出版状态	已出版 - 2010
活动	12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18 - Xi'an, 中国期限: 23 8月 2009 → 27 8月 2009

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title = "Preparation and properties of ultra low K porous silica films modified by trimethylchlorosilane (TMCS)",

abstract = "SiO2 porous thin films were prepared using polyvinyl alcohol as a template. Trimethylchlorosilane (TMCS) was used as modification reagent. The effects of TMCS concentration and modification time on dielectric property and morphology were investigated. The dielectric constant and loss of the SiO 2 porous thin films decreased with the increases of modification time and TMCS concentration. When the concentration of used TMCS and modification time are 60\% and 2 hours, the dielectric constant of porous silica can be lowered to 1.86. AFM analysis shows that the silica films before and after modification possess similar microstructure.",

keywords = "Porous silica films, Trimethylchlorosilane (TMCS) modification, Ultra low dielectric constants",

author = "Zhao Fengguo and Wu Xiaoqing and Ren Wei and Chen Xiaofeng and Shi Peng and Yao Xi",

year = "2010",

doi = "10.1080/00150193.2010.484673",

language = "英语",

volume = "406",

pages = "221--227",

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TY - JOUR

T1 - Preparation and properties of ultra low K porous silica films modified by trimethylchlorosilane (TMCS)

AU - Fengguo, Zhao

AU - Xiaoqing, Wu

AU - Wei, Ren

AU - Xiaofeng, Chen

AU - Peng, Shi

AU - Xi, Yao

PY - 2010

Y1 - 2010

N2 - SiO2 porous thin films were prepared using polyvinyl alcohol as a template. Trimethylchlorosilane (TMCS) was used as modification reagent. The effects of TMCS concentration and modification time on dielectric property and morphology were investigated. The dielectric constant and loss of the SiO 2 porous thin films decreased with the increases of modification time and TMCS concentration. When the concentration of used TMCS and modification time are 60% and 2 hours, the dielectric constant of porous silica can be lowered to 1.86. AFM analysis shows that the silica films before and after modification possess similar microstructure.

AB - SiO2 porous thin films were prepared using polyvinyl alcohol as a template. Trimethylchlorosilane (TMCS) was used as modification reagent. The effects of TMCS concentration and modification time on dielectric property and morphology were investigated. The dielectric constant and loss of the SiO 2 porous thin films decreased with the increases of modification time and TMCS concentration. When the concentration of used TMCS and modification time are 60% and 2 hours, the dielectric constant of porous silica can be lowered to 1.86. AFM analysis shows that the silica films before and after modification possess similar microstructure.

KW - Porous silica films

KW - Trimethylchlorosilane (TMCS) modification

KW - Ultra low dielectric constants

UR - https://www.scopus.com/pages/publications/79955683242

U2 - 10.1080/00150193.2010.484673

DO - 10.1080/00150193.2010.484673

M3 - 会议文章

AN - SCOPUS:79955683242

SN - 0015-0193

VL - 406

SP - 221

EP - 227

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

T2 - 12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18

Y2 - 23 August 2009 through 27 August 2009

ER -

Preparation and properties of ultra low K porous silica films modified by trimethylchlorosilane (TMCS)

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