Preparation and properties of highly oriented LaNiO₃ thin films on different substrates

Highly (100) and (110) oriented LaNiO₃ (LNO) thin films were prepared on various substrates, including Si (100), Si (111), SiO ₂/Si, Si₃N₄/Si by a metal-organic decomposition (MOD) method. Two different thermal processes were employed to crystallize LNO films. XRD analysis showed different thermal processes led to different preferential orientations of LNO films. The orientation dependence of LNO films on annealing process has been investigated. FESEM and AFM images show LNO films are uniform and crack-free. Low resistivity and high infrared absorbability make LNO thin film a promising electrode and infrared absorbed material for IR detector applications.