Preparation and characterization of CuInSe₂ thin films derived by electrodeposition process for solar cells

CuInSe₂ thin films for solar cells are deposited on indium tin oxide conductive glass substrates by one step electrodeposition process in a three-electrode system. The structural, compositional, and morphological properties of the deposited CuInSe₂ thin films are then characterized by X-ray diffraction analysis, X-ray photoelectron spectroscopy, and scanning electron microscopy. Results indicate that the CuInSe₂ thin films with smooth, homogeneous, and polycrystalline can be easily obtained. The atomic ratio of Cu, In, and Se of the CuInSe₂ thin films is 1.00:1.14:2.45 after annealing in a vacuum tubular furnace, and the thickness of the CuInSe₂ thin films is measured in a range between 1 μm and 1.6 μm, which meets the requirement for fabricating tandem solar cells.