Pizeoelectric epitaxial sol-gel Pb(Zr 0.52Ti 0.48) O 3 film on Si(001)

S. Yin; G. Le Rhun; E. Defay; B. Vilquin; G. Niu; Y. Robach; C. Dragoi; L. Trupina; L. Pintilie

doi:10.1109/ISAF.2012.6297812

Pizeoelectric epitaxial sol-gel Pb(Zr _0.52Ti _0.48) O ₃ film on Si(001)

S. Yin
, G. Le Rhun
, E. Defay
, B. Vilquin
, G. Niu
, Y. Robach
, C. Dragoi
, L. Trupina
, L. Pintilie

Commissariat à l’énergie atomique et aux énergies alternatives
École centrale de Lyon
Institut de Physique des Materiaux, Bucarest-Magurele

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

摘要

Epitaxial Pb(Zr _0.52Ti _0.48)O ₃ (PZT) thin film has been successfully integrated on Si(001) substrate by sol-gel method. SrTiO ₃ (STO) layer deposited on Si by Molecular Beam Epitaxy (MBE) acts as a template layer in this study to avoid the formation of amorphous SiO ₂, and allows the chemical compatibility for further epitaxial growth. For bottom electrode, SrRuO ₃ (SRO) layer grown by Pulsed Laser Deposition (PLD) on STO/Si was used. Epitaxial single crystalline growth of PZT film after Rapid Thermal Annealing (RTA) at 650°C was evidenced by X-Ray Diffraction (XRD). The following relationship in the heterostructure was deduced: [110] PZT (001) // [110] SRO (001) // [110] STO (001) // [100] Si (001). A clear piezoelectric response of the film was observed by Piezoresponse Force Microscope (PFM). Moreover, the structural STO quality was proved to have a major impact on the electrical properties of PZT films.

源语言	英语
主期刊名	Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012
DOI	https://doi.org/10.1109/ISAF.2012.6297812
出版状态	已出版 - 2012
已对外发布	是
活动	2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM - Aveiro, 葡萄牙期限: 9 7月 2012 → 13 7月 2012

丛书

姓名	Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012

会议

会议	2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM
国家/地区	葡萄牙
市	Aveiro
时期	9/07/12 → 13/07/12

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10.1109/ISAF.2012.6297812

其它文件与链接

链接到 Scopus 的出版物

引用此

Yin, S., Le Rhun, G., Defay, E., Vilquin, B., Niu, G., Robach, Y., Dragoi, C., Trupina, L., & Pintilie, L. (2012). Pizeoelectric epitaxial sol-gel Pb(Zr _0.52Ti _0.48) O ₃ film on Si(001). 在 Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012 期刊论文 6297812 (Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012). https://doi.org/10.1109/ISAF.2012.6297812

Yin, S. ; Le Rhun, G. ; Defay, E. 等. / Pizeoelectric epitaxial sol-gel Pb(Zr _0.52Ti _0.48) O ₃ film on Si(001). Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012. 2012. (Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012).

@inproceedings{e062822ecd254215a8124ec10e702bb2,

title = "Pizeoelectric epitaxial sol-gel Pb(Zr 0.52Ti 0.48) O 3 film on Si(001)",

abstract = "Epitaxial Pb(Zr 0.52Ti 0.48)O 3 (PZT) thin film has been successfully integrated on Si(001) substrate by sol-gel method. SrTiO 3 (STO) layer deposited on Si by Molecular Beam Epitaxy (MBE) acts as a template layer in this study to avoid the formation of amorphous SiO 2, and allows the chemical compatibility for further epitaxial growth. For bottom electrode, SrRuO 3 (SRO) layer grown by Pulsed Laser Deposition (PLD) on STO/Si was used. Epitaxial single crystalline growth of PZT film after Rapid Thermal Annealing (RTA) at 650°C was evidenced by X-Ray Diffraction (XRD). The following relationship in the heterostructure was deduced: [110] PZT (001) // [110] SRO (001) // [110] STO (001) // [100] Si (001). A clear piezoelectric response of the film was observed by Piezoresponse Force Microscope (PFM). Moreover, the structural STO quality was proved to have a major impact on the electrical properties of PZT films.",

keywords = "Epitaxy, MBE, PLD, PZT, SRO, STO, Sol-gel, piezoelectricity, single crystal",

author = "S. Yin and \{Le Rhun\}, G. and E. Defay and B. Vilquin and G. Niu and Y. Robach and C. Dragoi and L. Trupina and L. Pintilie",

year = "2012",

doi = "10.1109/ISAF.2012.6297812",

language = "英语",

isbn = "9781467326681",

series = "Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012",

booktitle = "Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012",

note = "2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM ; Conference date: 09-07-2012 Through 13-07-2012",

}

Yin, S, Le Rhun, G, Defay, E, Vilquin, B, Niu, G, Robach, Y, Dragoi, C, Trupina, L & Pintilie, L 2012, Pizeoelectric epitaxial sol-gel Pb(Zr _0.52Ti _0.48) O ₃ film on Si(001). 在 Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012., 6297812, Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012, 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM, Aveiro, 葡萄牙, 9/07/12. https://doi.org/10.1109/ISAF.2012.6297812

Pizeoelectric epitaxial sol-gel Pb(Zr _0.52Ti _0.48) O ₃ film on Si(001). / Yin, S.; Le Rhun, G.; Defay, E. 等.
Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012. 2012. 6297812 (Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - Pizeoelectric epitaxial sol-gel Pb(Zr 0.52Ti 0.48) O 3 film on Si(001)

AU - Yin, S.

AU - Le Rhun, G.

AU - Defay, E.

AU - Vilquin, B.

AU - Niu, G.

AU - Robach, Y.

AU - Dragoi, C.

AU - Trupina, L.

AU - Pintilie, L.

PY - 2012

Y1 - 2012

N2 - Epitaxial Pb(Zr 0.52Ti 0.48)O 3 (PZT) thin film has been successfully integrated on Si(001) substrate by sol-gel method. SrTiO 3 (STO) layer deposited on Si by Molecular Beam Epitaxy (MBE) acts as a template layer in this study to avoid the formation of amorphous SiO 2, and allows the chemical compatibility for further epitaxial growth. For bottom electrode, SrRuO 3 (SRO) layer grown by Pulsed Laser Deposition (PLD) on STO/Si was used. Epitaxial single crystalline growth of PZT film after Rapid Thermal Annealing (RTA) at 650°C was evidenced by X-Ray Diffraction (XRD). The following relationship in the heterostructure was deduced: [110] PZT (001) // [110] SRO (001) // [110] STO (001) // [100] Si (001). A clear piezoelectric response of the film was observed by Piezoresponse Force Microscope (PFM). Moreover, the structural STO quality was proved to have a major impact on the electrical properties of PZT films.

AB - Epitaxial Pb(Zr 0.52Ti 0.48)O 3 (PZT) thin film has been successfully integrated on Si(001) substrate by sol-gel method. SrTiO 3 (STO) layer deposited on Si by Molecular Beam Epitaxy (MBE) acts as a template layer in this study to avoid the formation of amorphous SiO 2, and allows the chemical compatibility for further epitaxial growth. For bottom electrode, SrRuO 3 (SRO) layer grown by Pulsed Laser Deposition (PLD) on STO/Si was used. Epitaxial single crystalline growth of PZT film after Rapid Thermal Annealing (RTA) at 650°C was evidenced by X-Ray Diffraction (XRD). The following relationship in the heterostructure was deduced: [110] PZT (001) // [110] SRO (001) // [110] STO (001) // [100] Si (001). A clear piezoelectric response of the film was observed by Piezoresponse Force Microscope (PFM). Moreover, the structural STO quality was proved to have a major impact on the electrical properties of PZT films.

KW - Epitaxy

KW - MBE

KW - PLD

KW - PZT

KW - SRO

KW - STO

KW - Sol-gel

KW - piezoelectricity

KW - single crystal

UR - https://www.scopus.com/pages/publications/84867911460

U2 - 10.1109/ISAF.2012.6297812

DO - 10.1109/ISAF.2012.6297812

M3 - 会议稿件

AN - SCOPUS:84867911460

SN - 9781467326681

T3 - Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012

BT - Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012

T2 - 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM

Y2 - 9 July 2012 through 13 July 2012

ER -

Yin S, Le Rhun G, Defay E, Vilquin B, Niu G, Robach Y 等. Pizeoelectric epitaxial sol-gel Pb(Zr _0.52Ti _0.48) O ₃ film on Si(001). 在 Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012. 2012. 6297812. (Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012). doi: 10.1109/ISAF.2012.6297812

Pizeoelectric epitaxial sol-gel Pb(Zr 0.52Ti 0.48) O 3 film on Si(001)

摘要

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引用此

Pizeoelectric epitaxial sol-gel Pb(Zr _0.52Ti _0.48) O ₃ film on Si(001)