TY - JOUR
T1 - Piezophototronic Effect Enhanced Flexible Tunneling Devices by Separating the Photosensitive Layer and the Piezoelectric Modulation Layer
AU - Wang, Yitong
AU - Li, Fangpei
AU - Peng, Wenbo
AU - Xie, Wanli
AU - Zhao, Xiaolong
AU - He, Yongning
N1 - Publisher Copyright:
© 2024 American Chemical Society.
PY - 2024/8/21
Y1 - 2024/8/21
N2 - The piezo-phototronic effect uses the piezoelectric potential/piezoelectric charge generated by the piezoelectric semiconductor material to regulate the energy band structure and photogenerated carrier behavior at the interface/junction, thereby modulating the device’s performance. The positive/negative piezoelectric charges generated at the interface of piezoelectric semiconductors can reduce the electron/hole barriers and thus enhance the transport of photogenerated carriers. However, electron/hole potential wells are formed when the electron/hole potential barrier caused by positive/negative piezoelectric charges is lowered too much, hindering the transport of photogenerated carriers. It is difficult to balance the relationship between potential barriers and potential wells while introducing the piezo-phototronic effect. In this work, a physical mechanism by separating the photosensitive layer and the piezoelectric modulation layer is proposed to deal with the above-mentioned issue in flexible tunneling devices. The piezoelectric modulation layer is solely used to adjust the electron/hole barriers, while the photosensitive layer is used to absorb photons and generate photogenerated carriers. This avoids the limitation on the transport of photogenerated carriers caused by potential wells in the piezoelectric semiconductor, thereby significantly increasing the adjustable range of the barriers. Experimental results show that the photoresponsivity of the flexible p-Si/Al2O3/n-ZnO tunneling device is optimized from 5.5 A/W to 35.8 A/W by the piezo-phototronic effect after separating the piezoelectric charges and photogenerated carriers. In addition, finite element analysis is used to simulate the influence of piezoelectric charges on the energy bands to corroborate the accuracy of the theoretical mechanism and experimental results. This work not only presents an optoelectronic device with excellent performance but also offers novel guidance for improving the performance of optoelectronic devices using the piezo-phototronic effect.
AB - The piezo-phototronic effect uses the piezoelectric potential/piezoelectric charge generated by the piezoelectric semiconductor material to regulate the energy band structure and photogenerated carrier behavior at the interface/junction, thereby modulating the device’s performance. The positive/negative piezoelectric charges generated at the interface of piezoelectric semiconductors can reduce the electron/hole barriers and thus enhance the transport of photogenerated carriers. However, electron/hole potential wells are formed when the electron/hole potential barrier caused by positive/negative piezoelectric charges is lowered too much, hindering the transport of photogenerated carriers. It is difficult to balance the relationship between potential barriers and potential wells while introducing the piezo-phototronic effect. In this work, a physical mechanism by separating the photosensitive layer and the piezoelectric modulation layer is proposed to deal with the above-mentioned issue in flexible tunneling devices. The piezoelectric modulation layer is solely used to adjust the electron/hole barriers, while the photosensitive layer is used to absorb photons and generate photogenerated carriers. This avoids the limitation on the transport of photogenerated carriers caused by potential wells in the piezoelectric semiconductor, thereby significantly increasing the adjustable range of the barriers. Experimental results show that the photoresponsivity of the flexible p-Si/Al2O3/n-ZnO tunneling device is optimized from 5.5 A/W to 35.8 A/W by the piezo-phototronic effect after separating the piezoelectric charges and photogenerated carriers. In addition, finite element analysis is used to simulate the influence of piezoelectric charges on the energy bands to corroborate the accuracy of the theoretical mechanism and experimental results. This work not only presents an optoelectronic device with excellent performance but also offers novel guidance for improving the performance of optoelectronic devices using the piezo-phototronic effect.
KW - Fowler−Nordheim tunneling
KW - Photosensitive layer
KW - Piezo-phototronic effect
KW - Piezoelectric modulation layer
KW - ZnO
UR - https://www.scopus.com/pages/publications/85201109996
U2 - 10.1021/acsami.4c08673
DO - 10.1021/acsami.4c08673
M3 - 文章
C2 - 39133472
AN - SCOPUS:85201109996
SN - 1944-8244
VL - 16
SP - 44278
EP - 44287
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 33
ER -