摘要
In this paper, a photovoltaic AMR sensor (PET/Ta (3 nm)/NiFe (d nm)/ PTB7-Th:PC71BM (80 nm)/Pt (3 nm)) is investigated. The device achieved maximal 364 Oe ferromagnetic resonance field shift and 402 Oe magnetic anisotropy field change under simulated sunlight. Significantly, the sensor achieved a 3-4 Ω magnetoresistance increase and a 36.8 % AMR ratio rise by sunlight illumination. And the increase of NiFe thin film thickness decreased the variation of AMR ratio. Excellent reversibility and reproducibility have also been exhibited. The doped photoelectrons can decrease the magnetic moment of NiFe and enhance the magnetoresistance by occupying 3d orbitals. The results demonstrate a promising application possibility in AMR sensors for photovoltaic spintronic devices in the future.
| 源语言 | 英语 |
|---|---|
| 主期刊名 | IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings |
| 出版商 | Institute of Electrical and Electronics Engineers Inc. |
| ISBN(电子版) | 9781665478342 |
| DOI | |
| 出版状态 | 已出版 - 2022 |
| 活动 | 2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Guangzhou, 中国 期限: 27 11月 2022 → 29 11月 2022 |
出版系列
| 姓名 | IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings |
|---|
会议
| 会议 | 2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 |
|---|---|
| 国家/地区 | 中国 |
| 市 | Guangzhou |
| 时期 | 27/11/22 → 29/11/22 |
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可持续发展目标 7 经济适用的清洁能源
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