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Photoemission under three-photon excitation in a NEA GaAs photocathode

  • Chinese Academy of Sciences

科研成果: 期刊稿件会议文章同行评审

摘要

The electron emission due to 2.06um Q-switched laser excitation on Cs, O2 activated GaAs photocathodes with different sensitivity has been measured. The cubic dependence on fluence is consistent with three-photon excitation across the bandgap of GaAs semiconductor. The same cubic response in photoelectron emission at liquid nitrogen temperature (77K) demonstrates that the electron emission is three-photon photoemission and thermal emission is negligible. The characteristics of multiphoton photoemission is strongly determined by the sensitivity of photocathode. A formula basing on three-order perturbation theory accounts quantitatively for our observation.

源语言英语
页(从-至)120-126
页数7
期刊Proceedings of SPIE - The International Society for Optical Engineering
1415
DOI
出版状态已出版 - 1991
已对外发布
活动Modeling and Simulation of Laser Systems II - Los Angeles, CA, USA
期限: 23 1月 199124 1月 1991

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