摘要
The electron emission due to 2.06um Q-switched laser excitation on Cs, O2 activated GaAs photocathodes with different sensitivity has been measured. The cubic dependence on fluence is consistent with three-photon excitation across the bandgap of GaAs semiconductor. The same cubic response in photoelectron emission at liquid nitrogen temperature (77K) demonstrates that the electron emission is three-photon photoemission and thermal emission is negligible. The characteristics of multiphoton photoemission is strongly determined by the sensitivity of photocathode. A formula basing on three-order perturbation theory accounts quantitatively for our observation.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 120-126 |
| 页数 | 7 |
| 期刊 | Proceedings of SPIE - The International Society for Optical Engineering |
| 卷 | 1415 |
| DOI | |
| 出版状态 | 已出版 - 1991 |
| 已对外发布 | 是 |
| 活动 | Modeling and Simulation of Laser Systems II - Los Angeles, CA, USA 期限: 23 1月 1991 → 24 1月 1991 |
学术指纹
探究 'Photoemission under three-photon excitation in a NEA GaAs photocathode' 的科研主题。它们共同构成独一无二的指纹。引用此
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