Novel glass-free low-temperature fired microwave dielectric ceramics: Bi(Ga1/3Mo2/3)O4

Li Xia Pang; Wei Guo Liu; Di Zhou; Zhen Xing Yue

doi:10.1016/j.ceramint.2015.11.152

Novel glass-free low-temperature fired microwave dielectric ceramics: Bi(Ga_1/3Mo_2/3)O₄

Li Xia Pang
, Wei Guo Liu
, Di Zhou
, Zhen Xing Yue

电子与信息学部

Xi'an Technological University
Tsinghua University

科研成果: 期刊稿件 › 文章 › 同行评审

15 引用（Scopus）

摘要

Novel glass-free low temperature firing microwave dielectric ceramics, Bi(Ga_1/3Mo_2/3)O₄, with ordered scheelite structure, were prepared through a conventional solid state reaction method. Dense ceramics were prepared at sintering temperatures from 800 to 860 °C. The Bi(Ga_1/3Mo_2/3)O₄ compound was crystallized with B-site ordered Scheelite-type structure with space group C2/c. The Bi(Ga_1/3Mo_2/3)O₄ ceramics can be well sintered at about 830 °C, exhibiting good microwave dielectric properties of ε_r~26.1, Qf~49,800 GHz, and TCF~-86 ppm/°C. Intrinsic dielectric parameters of the Bi(Ga_1/3Mo_2/3)O₄ ceramics were estimated by fitting far-infrared (FIR) reflectance spectra with the classical harmonic oscillator model.

源语言	英语
页（从-至）	4574-4577
页数	4
期刊	Ceramics International
卷	42
期	3
DOI	https://doi.org/10.1016/j.ceramint.2015.11.152
出版状态	已出版 - 15 2月 2016

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10.1016/j.ceramint.2015.11.152

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@article{2e26fe84678442e2af86ea5470ab628d,

title = "Novel glass-free low-temperature fired microwave dielectric ceramics: Bi(Ga1/3Mo2/3)O4",

abstract = "Novel glass-free low temperature firing microwave dielectric ceramics, Bi(Ga1/3Mo2/3)O4, with ordered scheelite structure, were prepared through a conventional solid state reaction method. Dense ceramics were prepared at sintering temperatures from 800 to 860 °C. The Bi(Ga1/3Mo2/3)O4 compound was crystallized with B-site ordered Scheelite-type structure with space group C2/c. The Bi(Ga1/3Mo2/3)O4 ceramics can be well sintered at about 830 °C, exhibiting good microwave dielectric properties of εr\textasciitilde{}26.1, Qf\textasciitilde{}49,800 GHz, and TCF\textasciitilde{}-86 ppm/°C. Intrinsic dielectric parameters of the Bi(Ga1/3Mo2/3)O4 ceramics were estimated by fitting far-infrared (FIR) reflectance spectra with the classical harmonic oscillator model.",

keywords = "A: Sintering, B: Spectroscopy, C: Dielectric properties",

author = "Pang, \{Li Xia\} and Liu, \{Wei Guo\} and Di Zhou and Yue, \{Zhen Xing\}",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd and Techna Group S.r.l.",

year = "2016",

month = feb,

day = "15",

doi = "10.1016/j.ceramint.2015.11.152",

language = "英语",

volume = "42",

pages = "4574--4577",

journal = "Ceramics International",

issn = "0272-8842",

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number = "3",

}

TY - JOUR

T1 - Novel glass-free low-temperature fired microwave dielectric ceramics

T2 - Bi(Ga1/3Mo2/3)O4

AU - Pang, Li Xia

AU - Liu, Wei Guo

AU - Zhou, Di

AU - Yue, Zhen Xing

PY - 2016/2/15

Y1 - 2016/2/15

N2 - Novel glass-free low temperature firing microwave dielectric ceramics, Bi(Ga1/3Mo2/3)O4, with ordered scheelite structure, were prepared through a conventional solid state reaction method. Dense ceramics were prepared at sintering temperatures from 800 to 860 °C. The Bi(Ga1/3Mo2/3)O4 compound was crystallized with B-site ordered Scheelite-type structure with space group C2/c. The Bi(Ga1/3Mo2/3)O4 ceramics can be well sintered at about 830 °C, exhibiting good microwave dielectric properties of εr~26.1, Qf~49,800 GHz, and TCF~-86 ppm/°C. Intrinsic dielectric parameters of the Bi(Ga1/3Mo2/3)O4 ceramics were estimated by fitting far-infrared (FIR) reflectance spectra with the classical harmonic oscillator model.

AB - Novel glass-free low temperature firing microwave dielectric ceramics, Bi(Ga1/3Mo2/3)O4, with ordered scheelite structure, were prepared through a conventional solid state reaction method. Dense ceramics were prepared at sintering temperatures from 800 to 860 °C. The Bi(Ga1/3Mo2/3)O4 compound was crystallized with B-site ordered Scheelite-type structure with space group C2/c. The Bi(Ga1/3Mo2/3)O4 ceramics can be well sintered at about 830 °C, exhibiting good microwave dielectric properties of εr~26.1, Qf~49,800 GHz, and TCF~-86 ppm/°C. Intrinsic dielectric parameters of the Bi(Ga1/3Mo2/3)O4 ceramics were estimated by fitting far-infrared (FIR) reflectance spectra with the classical harmonic oscillator model.

KW - A: Sintering

KW - B: Spectroscopy

KW - C: Dielectric properties

UR - https://www.scopus.com/pages/publications/84949670298

U2 - 10.1016/j.ceramint.2015.11.152

DO - 10.1016/j.ceramint.2015.11.152

M3 - 文章

AN - SCOPUS:84949670298

SN - 0272-8842

VL - 42

SP - 4574

EP - 4577

JO - Ceramics International

JF - Ceramics International

IS - 3

ER -

Novel glass-free low-temperature fired microwave dielectric ceramics: Bi(Ga1/3Mo2/3)O4

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Novel glass-free low-temperature fired microwave dielectric ceramics: Bi(Ga_1/3Mo_2/3)O₄