Nonvolatile bipolar resistive switching in an Ag/TiO 2/Nb: SrTiO 3/In device

Yongdan Zhu; Meiya Li; Hai Zhou; Zhongqiang Hu; Xiaolian Liu; Xiaoli Fang; Bobby Sebo; Guojia Fang; Xingzhong Zhao

doi:10.1088/0022-3727/45/37/375303

Nonvolatile bipolar resistive switching in an Ag/TiO ₂/Nb: SrTiO ₃/In device

Yongdan Zhu
, Meiya Li
, Hai Zhou
, Zhongqiang Hu
, Xiaolian Liu
, Xiaoli Fang
, Bobby Sebo
, Guojia Fang
, Xingzhong Zhao

Wuhan University
Hubei University for Nationalities

科研成果: 期刊稿件 › 文章 › 同行评审

40 引用（Scopus）

摘要

A TiO ₂ thin film was deposited on a Nb:SrTiO ₃ substrate by pulsed laser deposition to form an Ag/TiO ₂/Nb:SrTiO ₃/In device. The bipolar resistive switching (RS) effect of this device was investigated. The currentvoltage characteristics exhibited pronounced and stable bipolar RS features. The device could be switched to a low resistance state (LRS) at forward voltage and returned to a high resistance state (HRS) at reverse voltage, and the RS ratio R _HRS/R _LRS reached up to 2×10 ³ at a read voltage of -0.5V. Moreover, the RS ratio could be adjusted by changing the maximum value of the forward or reverse voltage, which shows promise for multilevel memories. These results are discussed by considering carrier injection-trapped/detrapped process of the heterostructure and show high potential for nonvolatile memory applications.

源语言	英语
期刊论文编号	375303
期刊	Journal of Physics D: Applied Physics
卷	45
期	37
DOI	https://doi.org/10.1088/0022-3727/45/37/375303
出版状态	已出版 - 19 9月 2012
已对外发布	是

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title = "Nonvolatile bipolar resistive switching in an Ag/TiO 2/Nb: SrTiO 3/In device",

abstract = "A TiO 2 thin film was deposited on a Nb:SrTiO 3 substrate by pulsed laser deposition to form an Ag/TiO 2/Nb:SrTiO 3/In device. The bipolar resistive switching (RS) effect of this device was investigated. The currentvoltage characteristics exhibited pronounced and stable bipolar RS features. The device could be switched to a low resistance state (LRS) at forward voltage and returned to a high resistance state (HRS) at reverse voltage, and the RS ratio R HRS/R LRS reached up to 2{\texttimes}10 3 at a read voltage of -0.5V. Moreover, the RS ratio could be adjusted by changing the maximum value of the forward or reverse voltage, which shows promise for multilevel memories. These results are discussed by considering carrier injection-trapped/detrapped process of the heterostructure and show high potential for nonvolatile memory applications.",

author = "Yongdan Zhu and Meiya Li and Hai Zhou and Zhongqiang Hu and Xiaolian Liu and Xiaoli Fang and Bobby Sebo and Guojia Fang and Xingzhong Zhao",

year = "2012",

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doi = "10.1088/0022-3727/45/37/375303",

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journal = "Journal of Physics D: Applied Physics",

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T1 - Nonvolatile bipolar resistive switching in an Ag/TiO 2/Nb

T2 - SrTiO 3/In device

AU - Zhu, Yongdan

AU - Li, Meiya

AU - Zhou, Hai

AU - Hu, Zhongqiang

AU - Liu, Xiaolian

AU - Fang, Xiaoli

AU - Sebo, Bobby

AU - Fang, Guojia

AU - Zhao, Xingzhong

PY - 2012/9/19

Y1 - 2012/9/19

N2 - A TiO 2 thin film was deposited on a Nb:SrTiO 3 substrate by pulsed laser deposition to form an Ag/TiO 2/Nb:SrTiO 3/In device. The bipolar resistive switching (RS) effect of this device was investigated. The currentvoltage characteristics exhibited pronounced and stable bipolar RS features. The device could be switched to a low resistance state (LRS) at forward voltage and returned to a high resistance state (HRS) at reverse voltage, and the RS ratio R HRS/R LRS reached up to 2×10 3 at a read voltage of -0.5V. Moreover, the RS ratio could be adjusted by changing the maximum value of the forward or reverse voltage, which shows promise for multilevel memories. These results are discussed by considering carrier injection-trapped/detrapped process of the heterostructure and show high potential for nonvolatile memory applications.

AB - A TiO 2 thin film was deposited on a Nb:SrTiO 3 substrate by pulsed laser deposition to form an Ag/TiO 2/Nb:SrTiO 3/In device. The bipolar resistive switching (RS) effect of this device was investigated. The currentvoltage characteristics exhibited pronounced and stable bipolar RS features. The device could be switched to a low resistance state (LRS) at forward voltage and returned to a high resistance state (HRS) at reverse voltage, and the RS ratio R HRS/R LRS reached up to 2×10 3 at a read voltage of -0.5V. Moreover, the RS ratio could be adjusted by changing the maximum value of the forward or reverse voltage, which shows promise for multilevel memories. These results are discussed by considering carrier injection-trapped/detrapped process of the heterostructure and show high potential for nonvolatile memory applications.

UR - https://www.scopus.com/pages/publications/84866002494

U2 - 10.1088/0022-3727/45/37/375303

DO - 10.1088/0022-3727/45/37/375303

M3 - 文章

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SN - 0022-3727

VL - 45

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

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M1 - 375303

ER -

Nonvolatile bipolar resistive switching in an Ag/TiO 2/Nb: SrTiO 3/In device

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Nonvolatile bipolar resistive switching in an Ag/TiO ₂/Nb: SrTiO ₃/In device