跳到主要导航 跳到搜索 跳到主要内容

Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4 /PMN-PT (011)

  • Ming Liu
  • , Jason Hoffman
  • , Jing Wang
  • , Jinxing Zhang
  • , Brittany Nelson-Cheeseman
  • , Anand Bhattacharya
  • Argonne National Laboratory
  • Beijing Normal University

科研成果: 期刊稿件文章同行评审

144 引用 (Scopus)

摘要

A central goal of electronics based on correlated materials or 'Mottronics' is the ability to switch between distinct collective states with a control voltage. Small changes in structure and charge density near a transition can tip the balance between competing phases, leading to dramatic changes in electronic and magnetic properties. In this work, we demonstrate that an electric field induced two-step ferroelastic switching pathway in (011) oriented 0.71Pb(Mg 1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates can be used to tune the Verwey metal-insulator transition in epitaxial Fe3O4 films in a stable and reversible manner. We also observe robust non-volatile resistance switching in Fe3O 4 up to room temperature, driven by ferroelastic strain. These results provides a framework for realizing non-volatile and reversible tuning of order parameters coupled to lattice-strain in epitaxial oxide heterostructures over a broad range of temperatures, with potential device applications.

源语言英语
文章编号1876
期刊Scientific Reports
3
DOI
出版状态已出版 - 2013
已对外发布

学术指纹

探究 'Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4 /PMN-PT (011)' 的科研主题。它们共同构成独一无二的指纹。

引用此