New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

Zeyu Hu; Weidong Zhang; Robin Degraeve; Daniele Garbin; Zheng Chai; Nishant Saxena; Pedro Freitas; Andrea Fantini; Taras Ravsher; Sergiu Clima; Jian Fu Zhang; Romain Delhougne; Ludovic Goux; Gouri Kar

doi:10.1109/TED.2022.3231233

New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

Zeyu Hu
, Weidong Zhang
, Robin Degraeve
, Daniele Garbin
, Zheng Chai
, Nishant Saxena
, Pedro Freitas
, Andrea Fantini
, Taras Ravsher
, Sergiu Clima
, Jian Fu Zhang
, Romain Delhougne
, Ludovic Goux
, Gouri Kar

材料科学与工程学院

Liverpool John Moores University
Interuniversitair Micro-Elektronica Centrum
Peng Cheng Laboratory
Guangdong Artificial Intelligence and Digital Economy Laboratory - Guangzhou

科研成果: 期刊稿件 › 文章 › 同行评审

8 引用（Scopus）

摘要

Experimental evidence and analysis in this work provide new insights into the fast switching process in GeAsTe ovonic threshold switching (OTS) selectors. For the first time, the full switching- OFF process, covering the defect cluster shrinking and rupture stages, can be measured and characterized. Two distinct switch- OFF mechanisms and their dependence on the total impedance of the selector and resistor (1S1Rs) circuit are identified. The impact of series resistance value on the switching process, the 1S1Rs operation, and the underlying mechanisms can be explained by the dynamic resistance of OTS that is induced by the transition of defect clusters. This research sheds new light on OTS switching mechanism and its impact on 1S1Rs operation.

源语言	英语
页（从-至）	812-818
页数	7
期刊	IEEE Transactions on Electron Devices
卷	70
期	2
DOI	https://doi.org/10.1109/TED.2022.3231233
出版状态	已出版 - 1 2月 2023

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10.1109/TED.2022.3231233

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title = "New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors",

abstract = "Experimental evidence and analysis in this work provide new insights into the fast switching process in GeAsTe ovonic threshold switching (OTS) selectors. For the first time, the full switching- OFF process, covering the defect cluster shrinking and rupture stages, can be measured and characterized. Two distinct switch- OFF mechanisms and their dependence on the total impedance of the selector and resistor (1S1Rs) circuit are identified. The impact of series resistance value on the switching process, the 1S1Rs operation, and the underlying mechanisms can be explained by the dynamic resistance of OTS that is induced by the transition of defect clusters. This research sheds new light on OTS switching mechanism and its impact on 1S1Rs operation.",

keywords = "1S1R, defects, emerging memory, mechanism, ovonic threshold switching (OTS), selector",

author = "Zeyu Hu and Weidong Zhang and Robin Degraeve and Daniele Garbin and Zheng Chai and Nishant Saxena and Pedro Freitas and Andrea Fantini and Taras Ravsher and Sergiu Clima and Zhang, \{Jian Fu\} and Romain Delhougne and Ludovic Goux and Gouri Kar",

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T1 - New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

AU - Hu, Zeyu

AU - Zhang, Weidong

AU - Degraeve, Robin

AU - Garbin, Daniele

AU - Chai, Zheng

AU - Saxena, Nishant

AU - Freitas, Pedro

AU - Fantini, Andrea

AU - Ravsher, Taras

AU - Clima, Sergiu

AU - Zhang, Jian Fu

AU - Delhougne, Romain

AU - Goux, Ludovic

AU - Kar, Gouri

PY - 2023/2/1

Y1 - 2023/2/1

N2 - Experimental evidence and analysis in this work provide new insights into the fast switching process in GeAsTe ovonic threshold switching (OTS) selectors. For the first time, the full switching- OFF process, covering the defect cluster shrinking and rupture stages, can be measured and characterized. Two distinct switch- OFF mechanisms and their dependence on the total impedance of the selector and resistor (1S1Rs) circuit are identified. The impact of series resistance value on the switching process, the 1S1Rs operation, and the underlying mechanisms can be explained by the dynamic resistance of OTS that is induced by the transition of defect clusters. This research sheds new light on OTS switching mechanism and its impact on 1S1Rs operation.

AB - Experimental evidence and analysis in this work provide new insights into the fast switching process in GeAsTe ovonic threshold switching (OTS) selectors. For the first time, the full switching- OFF process, covering the defect cluster shrinking and rupture stages, can be measured and characterized. Two distinct switch- OFF mechanisms and their dependence on the total impedance of the selector and resistor (1S1Rs) circuit are identified. The impact of series resistance value on the switching process, the 1S1Rs operation, and the underlying mechanisms can be explained by the dynamic resistance of OTS that is induced by the transition of defect clusters. This research sheds new light on OTS switching mechanism and its impact on 1S1Rs operation.

KW - 1S1R

KW - defects

KW - emerging memory

KW - mechanism

KW - ovonic threshold switching (OTS)

KW - selector

UR - https://www.scopus.com/pages/publications/85146216768

U2 - 10.1109/TED.2022.3231233

DO - 10.1109/TED.2022.3231233

M3 - 文章

AN - SCOPUS:85146216768

SN - 0018-9383

VL - 70

SP - 812

EP - 818

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

ER -

New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

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