Monolithic silicon multi-sensor for three-axis accelerometer pressure and temperature

A monolithic silicon multi-sensor for use in harsh environment is presented in this paper. This monolithic multi-sensor is fabricated with SOI wafer, which consists of a three-axis piezoresistive accelerometer, a piezoresistive absolute pressure sensor and a silicon thermistor temperature sensor. The designed structures of the multi-sensor are simulated by FEM (finite-element method). The simulation results for the multi-sensor are utilized to determine the position of piezoresistor and the size of the structures. The fabricating process of the monolithic multi-sensor is described, which uses bulk-micromachining technology and silicon-on-glass anodic bonding technology. At last the measurement results of the multi-sensor are shown.