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Moisture-modulated resistive switching behavior based on CaTiO3 prepared by the appropriate NaOH concentration

  • Yusheng Yang
  • , Bai Sun
  • , Zelin Cao
  • , Shuangsuo Mao
  • , Jiajia Qin
  • , Zhaowei Rao
  • , Mingnan Liu
  • , Chuan Ke
  • , Yong Zhao
  • Fujian Normal University
  • Xi'an Jiaotong University
  • Southwest Jiaotong University

科研成果: 期刊稿件文章同行评审

1 引用 (Scopus)

摘要

It is well known that the multi-mode responsive memristor has a great application prospect in the complex environment. The CaTiO3-based memristor was prepared under different NaOH concentrations, which exhibited an obvious resistive switching (RS) behavior at the working voltage of 1 V. The experimental results indicate that the purity of CaTiO3 is affected by different NaOH concentrations, leading to changes in its microstructure. Interestingly, moisture as an electrical stimulus can change the RS behavior. By comparison, a large memory window with stable cycling performance can be observed at the relative humidity (RH) of 60%. A physical model, which involves Ag+ ions, oxygen vacancy (Vo) and OH ions, was proposed to explain the charge transport mechanism of the moisture-modulated RS behavior. As an effective method to improve the memristive characteristics, the moisture-modulated RS behavior provides a great application for multi-mode-controlled memristor in physiological monitoring, such as sweat and infant urine monitoring.

源语言英语
文章编号112161
期刊Chemical Physics
578
DOI
出版状态已出版 - 1 2月 2024

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