MMC 子模块 IGBT 短路实验平台设计与实现

Yilin Wu; Yixuan Yang; Sheng Zhang; Chong Gao; Zhiyuan He; Guangfu Tang

doi:10.13334/j.0258-8013.pcsee.221538

MMC 子模块 IGBT 短路实验平台设计与实现

Yilin Wu
, Yixuan Yang
, Sheng Zhang
, Chong Gao
, Zhiyuan He
, Guangfu Tang

电气工程学院

North China Electric Power University
State Grid Corporation of China

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

In modular multilevel convertor (MMC) operation, insulated gate bipolar transistor (IGBT) or driver faults can cause sub-module short circuits, damaging devices. Studying this short-circuit condition is crucial for IGBT short-circuit protection and reliability research. This paper analyzes MMC sub-module short-circuit types and proposes, experimental platform design requirements. After optimizing short-circuit oscillations and electromagnetic interference and adjusting short-circuit circuit parasitic inductance, an MMC sub-module short-circuit experimental platform is developed. Experimental results show the developed platform meets IGBT short-circuit experiment requirements in MMC sub-module.

投稿的翻译标题	Design and Implementation of an Experimental Platform for IGBT Short-circuit in MMC Sub-module
源语言	繁体中文
页（从-至）	6384-6394
页数	11
期刊	Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering
卷	43
期	16
DOI	https://doi.org/10.13334/j.0258-8013.pcsee.221538
出版状态	已出版 - 20 8月 2023

关键词

electromagnetic interference (EMI)
insulated gate bipolar transistor (IGBT)
short-circuit oscillation
sub-module short-circuit

访问文件

10.13334/j.0258-8013.pcsee.221538

其它文件与链接

链接到 Scopus 的出版物

引用此

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title = "MMC 子模块 IGBT 短路实验平台设计与实现",

abstract = "In modular multilevel convertor (MMC) operation, insulated gate bipolar transistor (IGBT) or driver faults can cause sub-module short circuits, damaging devices. Studying this short-circuit condition is crucial for IGBT short-circuit protection and reliability research. This paper analyzes MMC sub-module short-circuit types and proposes, experimental platform design requirements. After optimizing short-circuit oscillations and electromagnetic interference and adjusting short-circuit circuit parasitic inductance, an MMC sub-module short-circuit experimental platform is developed. Experimental results show the developed platform meets IGBT short-circuit experiment requirements in MMC sub-module.",

keywords = "electromagnetic interference (EMI), insulated gate bipolar transistor (IGBT), short-circuit oscillation, sub-module short-circuit",

author = "Yilin Wu and Yixuan Yang and Sheng Zhang and Chong Gao and Zhiyuan He and Guangfu Tang",

note = "Publisher Copyright: {\textcopyright}2023 Chin.Soc.for Elec.Eng.",

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doi = "10.13334/j.0258-8013.pcsee.221538",

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TY - JOUR

T1 - MMC 子模块 IGBT 短路实验平台设计与实现

AU - Wu, Yilin

AU - Yang, Yixuan

AU - Zhang, Sheng

AU - Gao, Chong

AU - He, Zhiyuan

AU - Tang, Guangfu

PY - 2023/8/20

Y1 - 2023/8/20

N2 - In modular multilevel convertor (MMC) operation, insulated gate bipolar transistor (IGBT) or driver faults can cause sub-module short circuits, damaging devices. Studying this short-circuit condition is crucial for IGBT short-circuit protection and reliability research. This paper analyzes MMC sub-module short-circuit types and proposes, experimental platform design requirements. After optimizing short-circuit oscillations and electromagnetic interference and adjusting short-circuit circuit parasitic inductance, an MMC sub-module short-circuit experimental platform is developed. Experimental results show the developed platform meets IGBT short-circuit experiment requirements in MMC sub-module.

AB - In modular multilevel convertor (MMC) operation, insulated gate bipolar transistor (IGBT) or driver faults can cause sub-module short circuits, damaging devices. Studying this short-circuit condition is crucial for IGBT short-circuit protection and reliability research. This paper analyzes MMC sub-module short-circuit types and proposes, experimental platform design requirements. After optimizing short-circuit oscillations and electromagnetic interference and adjusting short-circuit circuit parasitic inductance, an MMC sub-module short-circuit experimental platform is developed. Experimental results show the developed platform meets IGBT short-circuit experiment requirements in MMC sub-module.

KW - electromagnetic interference (EMI)

KW - insulated gate bipolar transistor (IGBT)

KW - short-circuit oscillation

KW - sub-module short-circuit

UR - https://www.scopus.com/pages/publications/85170407028

U2 - 10.13334/j.0258-8013.pcsee.221538

DO - 10.13334/j.0258-8013.pcsee.221538

M3 - 文章

AN - SCOPUS:85170407028

SN - 0258-8013

VL - 43

SP - 6384

EP - 6394

JO - Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering

JF - Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering

IS - 16

ER -

MMC 子模块 IGBT 短路实验平台设计与实现

摘要

关键词

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