TY - JOUR
T1 - Microwave dielectric properties of mn-doped (Ba,Sr)TiO 3//Ba(Zr, Ti)O 3 multilayered thin films
T2 - Optimization of designed structure
AU - Liu, Ming
AU - Ma, Chunrui
AU - Liu, Jian
AU - Collins, Gregory
AU - Chen, Chonglin
AU - Xiang, Feng
AU - Wang, Hong
AU - He, Jie
AU - Jiang, Jiechao
AU - Meletis, Efstathios I.
AU - Bhalla, Amar
PY - 2014/1/2
Y1 - 2014/1/2
N2 - Environment-friendly Ferroelectric Mn:BST//Mn:BZT multilayer with additional 2% Mn doping were epitaxially fabricated on (001) MgO substrates by pulsed laser deposition with same thickness but different stacking periodic numbers or each layer thickness. Microstructure studies by X-ray diffraction and transmission electron microscopy indicate that the multilayer is c-axis oriented with good epitaxial nature. The microwave (∼18GHz) dielectric property measurements show that the dielectric loss tangent rapidly decreases with the increase of each layer thickness. The loss tangent can be lowered down to ∼0.043 at ∼18GHz, which suggests that the Mn:BST//Mn:BZT multilayer system has great potential for the development of room temperature microwave elements and related applications.
AB - Environment-friendly Ferroelectric Mn:BST//Mn:BZT multilayer with additional 2% Mn doping were epitaxially fabricated on (001) MgO substrates by pulsed laser deposition with same thickness but different stacking periodic numbers or each layer thickness. Microstructure studies by X-ray diffraction and transmission electron microscopy indicate that the multilayer is c-axis oriented with good epitaxial nature. The microwave (∼18GHz) dielectric property measurements show that the dielectric loss tangent rapidly decreases with the increase of each layer thickness. The loss tangent can be lowered down to ∼0.043 at ∼18GHz, which suggests that the Mn:BST//Mn:BZT multilayer system has great potential for the development of room temperature microwave elements and related applications.
UR - https://www.scopus.com/pages/publications/84894869342
U2 - 10.1080/10584587.2014.874838
DO - 10.1080/10584587.2014.874838
M3 - 文章
AN - SCOPUS:84894869342
SN - 1058-4587
VL - 150
SP - 116
EP - 122
JO - Integrated Ferroelectrics
JF - Integrated Ferroelectrics
IS - 1
ER -