摘要
Epitaxial films composed of (Y,Sr)CoO3-δ and nano-scale Y2O3 columns are successfully grown on (La0.289Sr0.712)(Al0.633Ta0.356)O3(001) substrates at 900 °C. The microstructural and electrical properties of the composite films are investigated and compared with those of the single-phase films prepared at 800 °C. In the composite films oxygen vacancies are detectable, which occur alternately in the stacking CoO2-δ planes of (Y,Sr)CoO3-δ. In addition, it is found that a large number of misfit dislocations distribute at the interfaces between the Y2O3 columns and the (Y,Sr)CoO3-δ film matrix. The measured resistivity of the composite films is significantly lower than that of the (Y,Sr)CoO3-δ single-phase films. Our results indicate that the electrical properties of the perovskite-based cobaltates films can be tuned by changing the microstructure through controlling the film-growth temperature.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 181-185 |
| 页数 | 5 |
| 期刊 | Journal of Alloys and Compounds |
| 卷 | 714 |
| DOI | |
| 出版状态 | 已出版 - 2017 |
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