Microstructure analysis of ferroelectric BaTiO3/SrTiO3 heterostructures on LaAlO3 substrates by high resolution X-ray diffraction

C. Dai; M. Liu; C. R. Ma; C. L. Chen; Y. Lin

doi:10.1080/00150193.2014.922836

Microstructure analysis of ferroelectric BaTiO₃/SrTiO₃ heterostructures on LaAlO₃ substrates by high resolution X-ray diffraction

C. Dai
, M. Liu
, C. R. Ma
, C. L. Chen
, Y. Lin

University of Electronic Science and Technology of China
University of Texas at San Antonio
University of Houston

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

High-resolution X-ray diffraction has been used to analyze the strain distribution and dislocation densities in epitaxial BaTiO₃/SrTiO₃ heterostructures. It is found that the initial layer in the heterostructures is important to the epitaxial quality and significantly affects the strain distribution, dislocation density, and the lateral coherence length in the heterostructural thin films.

源语言	英语
页（从-至）	90-98
页数	9
期刊	Ferroelectrics
卷	470
期	1
DOI	https://doi.org/10.1080/00150193.2014.922836
出版状态	已出版 - 25 10月 2014
已对外发布	是

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10.1080/00150193.2014.922836

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abstract = "High-resolution X-ray diffraction has been used to analyze the strain distribution and dislocation densities in epitaxial BaTiO3/SrTiO3 heterostructures. It is found that the initial layer in the heterostructures is important to the epitaxial quality and significantly affects the strain distribution, dislocation density, and the lateral coherence length in the heterostructural thin films.",

keywords = "HRXRD, Heterostructure, dislocation, strain",

author = "C. Dai and M. Liu and Ma, \{C. R.\} and Chen, \{C. L.\} and Y. Lin",

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AU - Dai, C.

AU - Liu, M.

AU - Ma, C. R.

AU - Chen, C. L.

AU - Lin, Y.

PY - 2014/10/25

Y1 - 2014/10/25

N2 - High-resolution X-ray diffraction has been used to analyze the strain distribution and dislocation densities in epitaxial BaTiO3/SrTiO3 heterostructures. It is found that the initial layer in the heterostructures is important to the epitaxial quality and significantly affects the strain distribution, dislocation density, and the lateral coherence length in the heterostructural thin films.

AB - High-resolution X-ray diffraction has been used to analyze the strain distribution and dislocation densities in epitaxial BaTiO3/SrTiO3 heterostructures. It is found that the initial layer in the heterostructures is important to the epitaxial quality and significantly affects the strain distribution, dislocation density, and the lateral coherence length in the heterostructural thin films.

KW - HRXRD

KW - Heterostructure

KW - dislocation

KW - strain

UR - https://www.scopus.com/pages/publications/84908192179

U2 - 10.1080/00150193.2014.922836

DO - 10.1080/00150193.2014.922836

M3 - 文章

AN - SCOPUS:84908192179

SN - 0015-0193

VL - 470

SP - 90

EP - 98

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

ER -

Microstructure analysis of ferroelectric BaTiO3/SrTiO3 heterostructures on LaAlO3 substrates by high resolution X-ray diffraction

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Microstructure analysis of ferroelectric BaTiO₃/SrTiO₃ heterostructures on LaAlO₃ substrates by high resolution X-ray diffraction