摘要
A novel MEMS/CMOS compatible gas sensor based on spectroscopy analysis, which is fabricated on a (110) silicon wafer, is proposed. Its main principle, structure, and fabrications are introduced in detail. The gas sensor gains high sensitivity and selectivity but has low power consumption, and it should detect the grads of gas concentration for the mentioned advantages.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 2043-2049 |
| 页数 | 7 |
| 期刊 | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
| 卷 | 29 |
| 期 | 10 |
| 出版状态 | 已出版 - 10月 2008 |
| 已对外发布 | 是 |
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