Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching

Lukang Wang; You Zhao; Yulong Zhao; Yu Yang; Bo Li; Taobo Gong

doi:10.1109/NEMS51815.2021.9451358

Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching

Lukang Wang
, You Zhao
, Yulong Zhao
, Yu Yang
, Bo Li
, Taobo Gong

机械工程学院

Xi'an Jiaotong University

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

6 引用（Scopus）

摘要

4H Silicon carbide (4H-SiC) is one of the most promising materials for pressure sensing in harsh environments. Due to the low efficiency and high energy consumption of dry etching process, mass manufacturing of SiC pressure sensors has always been a challenging problem. A Yb:KGW femtosecond laser was used to perform the circular diaphragms of bulk 4H-SiC by parallel straight line scanning. Small dimension errors and low surface roughness in rapid etching process were measured. This indicates the potential of utilising the femtosecond laser scanning approach to mass-fabricate bulk SiC sensor chips for pressure sensing.

源语言	英语
主期刊名	Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021
出版商	Institute of Electrical and Electronics Engineers Inc.
页	1478-1481
页数	4
ISBN（电子版）	9781665419413
DOI	https://doi.org/10.1109/NEMS51815.2021.9451358
出版状态	已出版 - 25 4月 2021
活动	16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021 - Xiamen, 中国期限: 25 4月 2021 → 29 4月 2021

出版系列

姓名	Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021

会议

会议	16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021
国家/地区	中国
市	Xiamen
时期	25/04/21 → 29/04/21

联合国可持续发展目标

此成果有助于实现下列可持续发展目标：

可持续发展目标 7 经济适用的清洁能源

访问文件

10.1109/NEMS51815.2021.9451358

其它文件与链接

链接到 Scopus 的出版物

引用此

Wang, L., Zhao, Y., Zhao, Y., Yang, Y., Li, B., & Gong, T. (2021). Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching. 在 Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021 (页码 1478-1481). 文章 9451358 (Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NEMS51815.2021.9451358

Wang, Lukang ; Zhao, You ; Zhao, Yulong 等. / Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching. Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021. Institute of Electrical and Electronics Engineers Inc., 2021. 页码 1478-1481 (Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021).

@inproceedings{f2107d2c93d941599c4d471d6f0e3ded,

title = "Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching",

abstract = "4H Silicon carbide (4H-SiC) is one of the most promising materials for pressure sensing in harsh environments. Due to the low efficiency and high energy consumption of dry etching process, mass manufacturing of SiC pressure sensors has always been a challenging problem. A Yb:KGW femtosecond laser was used to perform the circular diaphragms of bulk 4H-SiC by parallel straight line scanning. Small dimension errors and low surface roughness in rapid etching process were measured. This indicates the potential of utilising the femtosecond laser scanning approach to mass-fabricate bulk SiC sensor chips for pressure sensing.",

keywords = "4H-SiC, femtosecond laser, mass fabrication, pressure sensor",

author = "Lukang Wang and You Zhao and Yulong Zhao and Yu Yang and Bo Li and Taobo Gong",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021 ; Conference date: 25-04-2021 Through 29-04-2021",

year = "2021",

month = apr,

day = "25",

doi = "10.1109/NEMS51815.2021.9451358",

language = "英语",

series = "Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1478--1481",

booktitle = "Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021",

}

Wang, L, Zhao, Y, Zhao, Y, Yang, Y, Li, B & Gong, T 2021, Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching. 在 Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021., 9451358, Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021, Institute of Electrical and Electronics Engineers Inc., 页码 1478-1481, 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021, Xiamen, 中国, 25/04/21. https://doi.org/10.1109/NEMS51815.2021.9451358

Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching. / Wang, Lukang; Zhao, You; Zhao, Yulong 等.
Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021. Institute of Electrical and Electronics Engineers Inc., 2021. 页码 1478-1481 9451358 (Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching

AU - Wang, Lukang

AU - Zhao, You

AU - Zhao, Yulong

AU - Yang, Yu

AU - Li, Bo

AU - Gong, Taobo

PY - 2021/4/25

Y1 - 2021/4/25

N2 - 4H Silicon carbide (4H-SiC) is one of the most promising materials for pressure sensing in harsh environments. Due to the low efficiency and high energy consumption of dry etching process, mass manufacturing of SiC pressure sensors has always been a challenging problem. A Yb:KGW femtosecond laser was used to perform the circular diaphragms of bulk 4H-SiC by parallel straight line scanning. Small dimension errors and low surface roughness in rapid etching process were measured. This indicates the potential of utilising the femtosecond laser scanning approach to mass-fabricate bulk SiC sensor chips for pressure sensing.

AB - 4H Silicon carbide (4H-SiC) is one of the most promising materials for pressure sensing in harsh environments. Due to the low efficiency and high energy consumption of dry etching process, mass manufacturing of SiC pressure sensors has always been a challenging problem. A Yb:KGW femtosecond laser was used to perform the circular diaphragms of bulk 4H-SiC by parallel straight line scanning. Small dimension errors and low surface roughness in rapid etching process were measured. This indicates the potential of utilising the femtosecond laser scanning approach to mass-fabricate bulk SiC sensor chips for pressure sensing.

KW - 4H-SiC

KW - femtosecond laser

KW - mass fabrication

KW - pressure sensor

UR - https://www.scopus.com/pages/publications/85113344117

U2 - 10.1109/NEMS51815.2021.9451358

DO - 10.1109/NEMS51815.2021.9451358

M3 - 会议稿件

AN - SCOPUS:85113344117

T3 - Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021

SP - 1478

EP - 1481

BT - Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021

Y2 - 25 April 2021 through 29 April 2021

ER -

Wang L, Zhao Y, Zhao Y, Yang Y, Li B, Gong T. Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching. 在 Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021. Institute of Electrical and Electronics Engineers Inc. 2021. 页码 1478-1481. 9451358. (Proceedings of the 16th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2021). doi: 10.1109/NEMS51815.2021.9451358

Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching

摘要

出版系列

会议

联合国可持续发展目标

访问文件

其它文件与链接

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