Low temperature annealed ZnO film UV photodetector with fast photoresponse

Zhang Ke; Zhi Yang; Minqiang Wang; Minghui Cao; Zhongwang Sun; Jinyou Shao

doi:10.1016/j.sna.2016.07.026

Low temperature annealed ZnO film UV photodetector with fast photoresponse

Zhang Ke
, Zhi Yang
, Minqiang Wang
, Minghui Cao
, Zhongwang Sun
, Jinyou Shao

机械工程学院

Xi'an Jiaotong University

科研成果: 期刊稿件 › 文章 › 同行评审

62 引用（Scopus）

摘要

Zinc oxide thin film UV photodetectors based metal-semiconductor-metal structure were fabricated on Au interdigital electrodes by radio frequency magnetron sputtering. The performances of the UV photodetector under different annealing and testing temperatures from RT to 200 °C have been studied, obtaining optimized annealing temperature and suitable working temperature range. The detailed photoresponse mechanism has been discussed by analyzing competitive behaviors of several factors. The photodetector has good photoresponse linearity across a wide range of incident light intensity, and the response time, recovery time and responsivity were 0.82 ms, 0.64 ms and 124 A/W respectively under the 2.5 mW/cm² at 5 V applied bias. The low annealing temperature of ZnO film makes it be applied in flexible photodetector with great potential.

源语言	英语
页（从-至）	173-180
页数	8
期刊	Sensors and Actuators A: Physical
卷	253
DOI	https://doi.org/10.1016/j.sna.2016.07.026
出版状态	已出版 - 1 1月 2017

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10.1016/j.sna.2016.07.026

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title = "Low temperature annealed ZnO film UV photodetector with fast photoresponse",

abstract = "Zinc oxide thin film UV photodetectors based metal-semiconductor-metal structure were fabricated on Au interdigital electrodes by radio frequency magnetron sputtering. The performances of the UV photodetector under different annealing and testing temperatures from RT to 200 °C have been studied, obtaining optimized annealing temperature and suitable working temperature range. The detailed photoresponse mechanism has been discussed by analyzing competitive behaviors of several factors. The photodetector has good photoresponse linearity across a wide range of incident light intensity, and the response time, recovery time and responsivity were 0.82 ms, 0.64 ms and 124 A/W respectively under the 2.5 mW/cm2 at 5 V applied bias. The low annealing temperature of ZnO film makes it be applied in flexible photodetector with great potential.",

keywords = "Fast photoresponse, Low annealing temperature, MSM UV photodetector, Zinc oxide",

author = "Zhang Ke and Zhi Yang and Minqiang Wang and Minghui Cao and Zhongwang Sun and Jinyou Shao",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2017",

month = jan,

day = "1",

doi = "10.1016/j.sna.2016.07.026",

language = "英语",

volume = "253",

pages = "173--180",

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TY - JOUR

T1 - Low temperature annealed ZnO film UV photodetector with fast photoresponse

AU - Ke, Zhang

AU - Yang, Zhi

AU - Wang, Minqiang

AU - Cao, Minghui

AU - Sun, Zhongwang

AU - Shao, Jinyou

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Zinc oxide thin film UV photodetectors based metal-semiconductor-metal structure were fabricated on Au interdigital electrodes by radio frequency magnetron sputtering. The performances of the UV photodetector under different annealing and testing temperatures from RT to 200 °C have been studied, obtaining optimized annealing temperature and suitable working temperature range. The detailed photoresponse mechanism has been discussed by analyzing competitive behaviors of several factors. The photodetector has good photoresponse linearity across a wide range of incident light intensity, and the response time, recovery time and responsivity were 0.82 ms, 0.64 ms and 124 A/W respectively under the 2.5 mW/cm2 at 5 V applied bias. The low annealing temperature of ZnO film makes it be applied in flexible photodetector with great potential.

AB - Zinc oxide thin film UV photodetectors based metal-semiconductor-metal structure were fabricated on Au interdigital electrodes by radio frequency magnetron sputtering. The performances of the UV photodetector under different annealing and testing temperatures from RT to 200 °C have been studied, obtaining optimized annealing temperature and suitable working temperature range. The detailed photoresponse mechanism has been discussed by analyzing competitive behaviors of several factors. The photodetector has good photoresponse linearity across a wide range of incident light intensity, and the response time, recovery time and responsivity were 0.82 ms, 0.64 ms and 124 A/W respectively under the 2.5 mW/cm2 at 5 V applied bias. The low annealing temperature of ZnO film makes it be applied in flexible photodetector with great potential.

KW - Fast photoresponse

KW - Low annealing temperature

KW - MSM UV photodetector

KW - Zinc oxide

UR - https://www.scopus.com/pages/publications/85000631174

U2 - 10.1016/j.sna.2016.07.026

DO - 10.1016/j.sna.2016.07.026

M3 - 文章

AN - SCOPUS:85000631174

SN - 0924-4247

VL - 253

SP - 173

EP - 180

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

ER -

Low temperature annealed ZnO film UV photodetector with fast photoresponse

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