摘要
1,4-butanediamine (BEA) is incorporated into FASnI3 (FA=formamidinium) to develop a series of lead-free low-dimensional Dion–Jacobson-phase perovskites, (BEA)FAn−1SnnI3n+1. The broadness of the (BEA)FA2Sn3I10 band gap appears to be influenced by the structural distortion owing to high symmetry. The introduction of BEA ligand stabilizes the low-dimensional perovskite structure (formation energy ca. 106 j mol−1), which inhibits the oxidation of Sn2+. The compact (BEA)FA2Sn3I10 dominated film enables a weakened carrier localization mechanism with a charge transfer time of only 0.36 ps among the quantum wells, resulting in a carrier diffusion length over 450 nm for electrons and 340 nm for holes, respectively. Solar cell fabrication with (BEA)FA2Sn3I10 delivers a power conversion efficiency (PCE) of 6.43 % with negligible hysteresis. The devices can retain over 90 % of their initial PCE after 1000 h without encapsulation under N2 environment.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 6909-6914 |
| 页数 | 6 |
| 期刊 | Angewandte Chemie - International Edition |
| 卷 | 59 |
| 期 | 17 |
| DOI | |
| 出版状态 | 已出版 - 20 4月 2020 |
| 已对外发布 | 是 |
学术指纹
探究 'Low-Dimensional Dion–Jacobson-Phase Lead-Free Perovskites for High-Performance Photovoltaics with Improved Stability' 的科研主题。它们共同构成独一无二的指纹。引用此
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