摘要
The efficiency of interfacial ion mixing is measured for metal/Al (metal=Ti, Cr, Ni, and Mo) thin-film bilayers irradiated with 285 keV Xe + ions near 77 K. The results indicate that, as a group, mixing of 3d-metal/Al pairs irradiated by Xe can be explained by neither a pure binary collision cascade nor a pure thermal spike model. Such a situation should exist; that it should be found at the average atomic numbers of the present bilayers is consistent with recent theoretical predictions.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 413-415 |
| 页数 | 3 |
| 期刊 | Applied Physics Letters |
| 卷 | 54 |
| 期 | 5 |
| DOI | |
| 出版状态 | 已出版 - 1989 |
| 已对外发布 | 是 |
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