Investigation of Electron Stopping Power of Low-Energy Particles in Silicon Carbide: A Dynamics Simulation Based on Time-Dependent Density Functional Theory

Silicon carbide (SiC) is highly favored in the field of nuclear energy due to its excellent properties such as stability under extreme conditions and high radiation resistance. It has a low neutron absorption cross-section and high thermal conductivity, which makes it suitable for nuclear structural materials and fuel cladding. The electron stopping power is of great significance for materials science and radiation protection. However, due to the complex interactions, it is very difficult to measure it accurately at low energies. In this study, the time-dependent density functional theory combined with the Ehrenfest dynamics method is used to explore the low-energy electron stopping power in silicon carbide. During this process, by studying the charge transfer, the energy loss is understood, and the obtained results are compared with those of other studies to verify the effectiveness of this method, providing a reference idea for the research and development of radiation-resistant materials and the development of nuclear technology.