Interface optimization of 4H-SiC (0001) MOS structures with supercritical CO₂ fluid

Supercritical CO₂ fluid is reported as an effective media in optimizing the SiO₂/SiC interface in 4H-SiC(0001) MOS structures at a temperature as low as 150 °C. After SCCO₂ treatment, the breakdown electric field is improved to 10.7 MV cm⁻¹. The near-interfacial oxide traps is decreased from 1.62 × 10¹¹ to 1.84 × 10¹⁰ cm⁻². The interface state density at 0.2 eV below E_C is reduced from 6 × 10¹² to 2.5 × 10¹² eV⁻¹ cm⁻². A dynamic reaction model is proposed to explain the defect passivation reaction. This technique can be effectively applied to interface semiconductor devices to enhance performance.