TY - JOUR
T1 - Interface engineering of large-scale and flexible Cu/YIG heterojunctions
AU - Yao, Yufei
AU - Zhao, Yanan
AU - Chai, Yafang
AU - Zhou, Zicong
AU - Meng, Xiangzhao
AU - Li, Yaojin
AU - Lu, Qi
AU - Liu, Haixia
AU - Yang, Guannan
AU - Dong, Guohua
AU - Peng, Bin
AU - Hu, Zhongqiang
AU - Liu, Ming
N1 - Publisher Copyright:
© 2024 Elsevier B.V.
PY - 2025/2/5
Y1 - 2025/2/5
N2 - With the development of aerospace and modern communication towards portability and miniaturisation, especially in high-frequency microwave devices, developing the large-scale and low-damping flexible ferrite materials is the top priority. Yttrium iron garnet (Y3Fe5O12, YIG) is widely used in microwave filters, phase shifters, isolators, etc., being the research hotspot of flexible devices due to high-resistivity, low-damping and good chemical stability. In this paper, large-scale (Diameter 40 mm) and flexible YIG films with damping constant (5 × 10−4) and inhomogeneous broadening (66.7 Oe) were prepared by double-cavity magnetron sputtering technology. Then, flexible Cu/YIG heterojunctions with different Cu thicknesses were prepared. The change in the ferromagnetic resonance field of the heterojunction during bending does not exceed 3%, which does not exceed 0.3% after stress removal (bending diameter 10 mm). The low-cost and easy to operate process of flexible Cu/YIG heterojunctions, together with excellent bending characteristics, offer tremendous potential applications in next generation flexible electronic devices.
AB - With the development of aerospace and modern communication towards portability and miniaturisation, especially in high-frequency microwave devices, developing the large-scale and low-damping flexible ferrite materials is the top priority. Yttrium iron garnet (Y3Fe5O12, YIG) is widely used in microwave filters, phase shifters, isolators, etc., being the research hotspot of flexible devices due to high-resistivity, low-damping and good chemical stability. In this paper, large-scale (Diameter 40 mm) and flexible YIG films with damping constant (5 × 10−4) and inhomogeneous broadening (66.7 Oe) were prepared by double-cavity magnetron sputtering technology. Then, flexible Cu/YIG heterojunctions with different Cu thicknesses were prepared. The change in the ferromagnetic resonance field of the heterojunction during bending does not exceed 3%, which does not exceed 0.3% after stress removal (bending diameter 10 mm). The low-cost and easy to operate process of flexible Cu/YIG heterojunctions, together with excellent bending characteristics, offer tremendous potential applications in next generation flexible electronic devices.
KW - Flexibility
KW - Interface
KW - Large-scale
KW - Magnetron sputtering technology
KW - Yttrium iron garnet
UR - https://www.scopus.com/pages/publications/85213227159
U2 - 10.1016/j.physleta.2024.130201
DO - 10.1016/j.physleta.2024.130201
M3 - 文章
AN - SCOPUS:85213227159
SN - 0375-9601
VL - 532
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
M1 - 130201
ER -