Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

J. E. Rault; G. Agnus; T. Maroutian; V. Pillard; Ph Lecoeur; G. Niu; B. Vilquin; M. G. Silly; A. Bendounan; F. Sirotti; N. Barrett

doi:10.1103/PhysRevB.87.155146

Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

J. E. Rault
, G. Agnus
, T. Maroutian
, V. Pillard
, Ph Lecoeur
, G. Niu
, B. Vilquin
, M. G. Silly
, A. Bendounan
, F. Sirotti
, N. Barrett

Commissariat à l’énergie atomique et aux énergies alternatives
Université Paris-Saclay
École centrale de Lyon
L'orme des merisiers

科研成果: 期刊稿件 › 文章 › 同行评审

47 引用（Scopus）

摘要

The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO₃/Nb-doped SrTiO₃, under in-situ bias voltage is investigated using x-ray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.

源语言	英语
文章编号	155146
期刊	Physical Review B - Condensed Matter and Materials Physics
卷	87
期	15
DOI	https://doi.org/10.1103/PhysRevB.87.155146
出版状态	已出版 - 26 4月 2013
已对外发布	是

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abstract = "The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using x-ray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.",

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doi = "10.1103/PhysRevB.87.155146",

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T1 - Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

AU - Rault, J. E.

AU - Agnus, G.

AU - Maroutian, T.

AU - Pillard, V.

AU - Lecoeur, Ph

AU - Niu, G.

AU - Vilquin, B.

AU - Silly, M. G.

AU - Bendounan, A.

AU - Sirotti, F.

AU - Barrett, N.

PY - 2013/4/26

Y1 - 2013/4/26

N2 - The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using x-ray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.

AB - The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using x-ray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.

UR - https://www.scopus.com/pages/publications/84877043761

U2 - 10.1103/PhysRevB.87.155146

DO - 10.1103/PhysRevB.87.155146

M3 - 文章

AN - SCOPUS:84877043761

SN - 1098-0121

VL - 87

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 15

M1 - 155146

ER -

Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

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