TY - GEN
T1 - Interface constraint effect and stress relaxation in nano-sandwiched thin film
AU - Chang, Gengrong
AU - Ma, Fei
AU - Ma, Dayan
AU - Xu, Kewei
PY - 2013
Y1 - 2013
N2 - Micro-particles and nano-wires, small outgrowths were found to appear on upper film surface when metal thin film is confined between two Si3N4 layers deposited by magnetron sputtering and is annealed at an appropriate temperature. The stress evolution during this process is monitored by multi-beam optic stress sensor, and is qualitatively interpreted in terms of elastic and plastic deformation, as well as bulk diffusion. Additionally, the interface constraint effect among different layers is explored. Stress relaxation of nano-sandwiched thin films behaves in different stress modes. As a comparative study, Si3N4/Zn/Si3N4 sandwiches were prepared and studied by the same method. Experimental results show that the pertinent geometry is strongly dependent on material types and stress states of the substrates. Finally, an appropriate mode was suggested to interpret this phenomenon.
AB - Micro-particles and nano-wires, small outgrowths were found to appear on upper film surface when metal thin film is confined between two Si3N4 layers deposited by magnetron sputtering and is annealed at an appropriate temperature. The stress evolution during this process is monitored by multi-beam optic stress sensor, and is qualitatively interpreted in terms of elastic and plastic deformation, as well as bulk diffusion. Additionally, the interface constraint effect among different layers is explored. Stress relaxation of nano-sandwiched thin films behaves in different stress modes. As a comparative study, Si3N4/Zn/Si3N4 sandwiches were prepared and studied by the same method. Experimental results show that the pertinent geometry is strongly dependent on material types and stress states of the substrates. Finally, an appropriate mode was suggested to interpret this phenomenon.
KW - Interface constraint
KW - Micro-particles and nano-wires
KW - Nano-sandwiched thin film
KW - Stress relaxation
UR - https://www.scopus.com/pages/publications/84875727309
U2 - 10.4028/www.scientific.net/AMR.669.154
DO - 10.4028/www.scientific.net/AMR.669.154
M3 - 会议稿件
AN - SCOPUS:84875727309
SN - 9783037856291
T3 - Advanced Materials Research
SP - 154
EP - 160
BT - Leading Edge of Micro-Nano Science and Technology
T2 - 11th China International Nanoscience and Technology Symposium, CINST 2012
Y2 - 21 October 2012 through 25 October 2012
ER -