@inproceedings{942981990d5144f28835f0f0e08da2c5,
title = "Interface and Doping Engineering of HfO Based Multi-Level RRAM: Towards Synaptic Simulation for Neuromorphic Computation",
abstract = "An ability to simulate synaptic behavior by interface and doping engineering has been reported. A significant improvement in on/off ratio can be obtained by ozone oxidation pre-treatment on a RRAM device. The improved resistive switching behavior with high memory windows can be obtained by Al3+ doping and post deposition annealing helps the device to better show synaptic characteristics.",
keywords = "HfO, RRAM, doping, interface, synaptic simulation",
author = "Sourav Roy and Qiang Wang and Yunkun Wang and Yijun Zhang and Shijie Zhai and Wei Ren and Ye, \{Zuo Guang\} and Gang Niu",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 ; Conference date: 17-06-2019 Through 19-06-2019",
year = "2019",
month = jun,
doi = "10.1109/ICICDT.2019.8790856",
language = "英语",
series = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",
}