Influence of Li doping on domain wall motion in Pb(Zr0.52Ti 0.48)O3 films

Wanlin Zhu; Ichiro Fujii; Wei Ren; Susan Trolier-Mckinstry

doi:10.1007/s10853-014-8500-0

Influence of Li doping on domain wall motion in Pb(Zr_0.52Ti _0.48)O₃ films

Wanlin Zhu
, Ichiro Fujii
, Wei Ren
, Susan Trolier-Mckinstry

电子与信息学部

Pennsylvania State University
Xi'an Jiaotong University

科研成果: 期刊稿件 › 文章 › 同行评审

6 引用（Scopus）

摘要

Li-doped PbZr_0.52Ti_0.48O₃ (PZT) films were utilized to study the effect of A-site acceptor dopants on the mobility of ferroelectric domain walls. For chemical solution-deposited PZT films 2 μm in thickness doped with 1-3 mol% Li, the low-field dielectric permittivity remained between 1200 and 1300. With increasing Li concentration, the reversible Rayleigh constants ε _init increased from 1080 for undoped PZT films to 1240 for the films doped with 3 mol% Li, while the irreversible Rayleigh parameter showed a peak value at 1 mol% Li doping.

源语言	英语
页（从-至）	7883-7889
页数	7
期刊	Journal of Materials Science
卷	49
期	22
DOI	https://doi.org/10.1007/s10853-014-8500-0
出版状态	已出版 - 11月 2014

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title = "Influence of Li doping on domain wall motion in Pb(Zr0.52Ti 0.48)O3 films",

abstract = "Li-doped PbZr0.52Ti0.48O3 (PZT) films were utilized to study the effect of A-site acceptor dopants on the mobility of ferroelectric domain walls. For chemical solution-deposited PZT films 2 μm in thickness doped with 1-3 mol\% Li, the low-field dielectric permittivity remained between 1200 and 1300. With increasing Li concentration, the reversible Rayleigh constants ε init increased from 1080 for undoped PZT films to 1240 for the films doped with 3 mol\% Li, while the irreversible Rayleigh parameter showed a peak value at 1 mol\% Li doping.",

author = "Wanlin Zhu and Ichiro Fujii and Wei Ren and Susan Trolier-Mckinstry",

year = "2014",

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doi = "10.1007/s10853-014-8500-0",

language = "英语",

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T1 - Influence of Li doping on domain wall motion in Pb(Zr0.52Ti 0.48)O3 films

AU - Zhu, Wanlin

AU - Fujii, Ichiro

AU - Ren, Wei

AU - Trolier-Mckinstry, Susan

PY - 2014/11

Y1 - 2014/11

N2 - Li-doped PbZr0.52Ti0.48O3 (PZT) films were utilized to study the effect of A-site acceptor dopants on the mobility of ferroelectric domain walls. For chemical solution-deposited PZT films 2 μm in thickness doped with 1-3 mol% Li, the low-field dielectric permittivity remained between 1200 and 1300. With increasing Li concentration, the reversible Rayleigh constants ε init increased from 1080 for undoped PZT films to 1240 for the films doped with 3 mol% Li, while the irreversible Rayleigh parameter showed a peak value at 1 mol% Li doping.

AB - Li-doped PbZr0.52Ti0.48O3 (PZT) films were utilized to study the effect of A-site acceptor dopants on the mobility of ferroelectric domain walls. For chemical solution-deposited PZT films 2 μm in thickness doped with 1-3 mol% Li, the low-field dielectric permittivity remained between 1200 and 1300. With increasing Li concentration, the reversible Rayleigh constants ε init increased from 1080 for undoped PZT films to 1240 for the films doped with 3 mol% Li, while the irreversible Rayleigh parameter showed a peak value at 1 mol% Li doping.

UR - https://www.scopus.com/pages/publications/84906949054

U2 - 10.1007/s10853-014-8500-0

DO - 10.1007/s10853-014-8500-0

M3 - 文章

AN - SCOPUS:84906949054

SN - 0022-2461

VL - 49

SP - 7883

EP - 7889

JO - Journal of Materials Science

JF - Journal of Materials Science

IS - 22

ER -

Influence of Li doping on domain wall motion in Pb(Zr0.52Ti 0.48)O3 films

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Influence of Li doping on domain wall motion in Pb(Zr_0.52Ti _0.48)O₃ films