Influence of high temperature reliability test of 1200V SiC MOSFET on static parameters

Peifei Wu; Guangfu Tang; Fei Yang; Zechen Du; Yujie Du; Junmin Wu

doi:10.1088/1742-6596/2033/1/012096

Influence of high temperature reliability test of 1200V SiC MOSFET on static parameters

Peifei Wu
, Guangfu Tang
, Fei Yang
, Zechen Du
, Yujie Du
, Junmin Wu

电气工程学院

State Key Laboratory of Advanced Power Transmission Technology (Global Energy Interconnection Researcher Institute)

科研成果: 期刊稿件 › 会议文章 › 同行评审

3 引用（Scopus）

摘要

The gate oxide interface state of SiC MOSFET is the main factor that affects the high temperature reliability of the device. Therefore, the high temperature reliability test of planar gate depleted 1200V20A SiC MOSFET is carried out in this paper. The relationship between leakage current and temperature is studied by comparing the change process of leakage current and temperature in the initial stage of high temperature gate bias and high temperature reverse bias. After the HTGB and HTRB test, the threshold voltage and on resistance are measured at room temperature. The influence of the HTGB test and HTRB test on device parameters is further analyzed, and the relationship between them is revealed.

源语言	英语
期刊论文编号	012096
期刊	Journal of Physics: Conference Series
卷	2033
期	1
DOI	https://doi.org/10.1088/1742-6596/2033/1/012096
出版状态	已出版 - 5 10月 2021
活动	3rd International Conference on Electrical, Communication and Computer Engineering, ICECCE 2021 - Kuala Lumpur, Virtual, 马来西亚期限: 12 6月 2021 → 13 6月 2021

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10.1088/1742-6596/2033/1/012096

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@article{7f61864911754becb530dc0a5ed7f459,

title = "Influence of high temperature reliability test of 1200V SiC MOSFET on static parameters",

abstract = "The gate oxide interface state of SiC MOSFET is the main factor that affects the high temperature reliability of the device. Therefore, the high temperature reliability test of planar gate depleted 1200V20A SiC MOSFET is carried out in this paper. The relationship between leakage current and temperature is studied by comparing the change process of leakage current and temperature in the initial stage of high temperature gate bias and high temperature reverse bias. After the HTGB and HTRB test, the threshold voltage and on resistance are measured at room temperature. The influence of the HTGB test and HTRB test on device parameters is further analyzed, and the relationship between them is revealed.",

keywords = "High temperature reliability test, HTGB, HTRB, SiC MOSFET",

author = "Peifei Wu and Guangfu Tang and Fei Yang and Zechen Du and Yujie Du and Junmin Wu",

note = "Publisher Copyright: {\textcopyright} 2021 Institute of Physics Publishing. All rights reserved.; 3rd International Conference on Electrical, Communication and Computer Engineering, ICECCE 2021 ; Conference date: 12-06-2021 Through 13-06-2021",

year = "2021",

month = oct,

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doi = "10.1088/1742-6596/2033/1/012096",

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journal = "Journal of Physics: Conference Series",

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TY - JOUR

T1 - Influence of high temperature reliability test of 1200V SiC MOSFET on static parameters

AU - Wu, Peifei

AU - Tang, Guangfu

AU - Yang, Fei

AU - Du, Zechen

AU - Du, Yujie

AU - Wu, Junmin

PY - 2021/10/5

Y1 - 2021/10/5

N2 - The gate oxide interface state of SiC MOSFET is the main factor that affects the high temperature reliability of the device. Therefore, the high temperature reliability test of planar gate depleted 1200V20A SiC MOSFET is carried out in this paper. The relationship between leakage current and temperature is studied by comparing the change process of leakage current and temperature in the initial stage of high temperature gate bias and high temperature reverse bias. After the HTGB and HTRB test, the threshold voltage and on resistance are measured at room temperature. The influence of the HTGB test and HTRB test on device parameters is further analyzed, and the relationship between them is revealed.

AB - The gate oxide interface state of SiC MOSFET is the main factor that affects the high temperature reliability of the device. Therefore, the high temperature reliability test of planar gate depleted 1200V20A SiC MOSFET is carried out in this paper. The relationship between leakage current and temperature is studied by comparing the change process of leakage current and temperature in the initial stage of high temperature gate bias and high temperature reverse bias. After the HTGB and HTRB test, the threshold voltage and on resistance are measured at room temperature. The influence of the HTGB test and HTRB test on device parameters is further analyzed, and the relationship between them is revealed.

KW - High temperature reliability test

KW - HTGB

KW - HTRB

KW - SiC MOSFET

UR - https://www.scopus.com/pages/publications/85117507232

U2 - 10.1088/1742-6596/2033/1/012096

DO - 10.1088/1742-6596/2033/1/012096

M3 - 会议文章

AN - SCOPUS:85117507232

SN - 1742-6588

VL - 2033

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012096

T2 - 3rd International Conference on Electrical, Communication and Computer Engineering, ICECCE 2021

Y2 - 12 June 2021 through 13 June 2021

ER -

Influence of high temperature reliability test of 1200V SiC MOSFET on static parameters

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