In situ growth of Sb2S3 thin films by reactive sputtering on n-Si(100) substrates for top sub-cell of silicon based tandem solar cells

Chunhui Gao; Ming Xu; Boon K. Ng; Liangliang Kang; Liangxing Jiang; Yanqing Lai; Fangyang Liu

doi:10.1016/j.matlet.2017.02.046

In situ growth of Sb₂S₃ thin films by reactive sputtering on n-Si(100) substrates for top sub-cell of silicon based tandem solar cells

Chunhui Gao
, Ming Xu
, Boon K. Ng
, Liangliang Kang
, Liangxing Jiang
, Yanqing Lai
, Fangyang Liu

Central South University
University of Canberra

科研成果: 期刊稿件 › 文章 › 同行评审

30 引用（Scopus）

摘要

Si-based tandem solar cells have emerged as a promising alternative to replace the current high efficiency silicon single junction solar cells. Sb₂S₃ is a promising candidates for top cell absorbers due to its suitable band gap, non-toxic and earth-abundant constituent, simple composition, and long term stability. Here, in situ growth of Sb₂S₃ thin films by radio frequency (RF) reactive sputtering on n-Si(100) substrates is reported. The effects of the growth temperature on morphology, structure, optical and electrical properties of the films were evaluated. The top sub-cell device shows an open circuit voltage (V_oc) of 367 mV, indicating the potential to be the top cell of the next generation Si-based tandem solar cells.

源语言	英语
页（从-至）	186-189
页数	4
期刊	Materials Letters
卷	195
DOI	https://doi.org/10.1016/j.matlet.2017.02.046
出版状态	已出版 - 15 5月 2017
已对外发布	是

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10.1016/j.matlet.2017.02.046

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title = "In situ growth of Sb2S3 thin films by reactive sputtering on n-Si(100) substrates for top sub-cell of silicon based tandem solar cells",

abstract = "Si-based tandem solar cells have emerged as a promising alternative to replace the current high efficiency silicon single junction solar cells. Sb2S3 is a promising candidates for top cell absorbers due to its suitable band gap, non-toxic and earth-abundant constituent, simple composition, and long term stability. Here, in situ growth of Sb2S3 thin films by radio frequency (RF) reactive sputtering on n-Si(100) substrates is reported. The effects of the growth temperature on morphology, structure, optical and electrical properties of the films were evaluated. The top sub-cell device shows an open circuit voltage (Voc) of 367 mV, indicating the potential to be the top cell of the next generation Si-based tandem solar cells.",

keywords = "In situ growth, Reactive sputtering, SbS thin films, Top sub-cells",

author = "Chunhui Gao and Ming Xu and Ng, \{Boon K.\} and Liangliang Kang and Liangxing Jiang and Yanqing Lai and Fangyang Liu",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = may,

day = "15",

doi = "10.1016/j.matlet.2017.02.046",

language = "英语",

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pages = "186--189",

journal = "Materials Letters",

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TY - JOUR

T1 - In situ growth of Sb2S3 thin films by reactive sputtering on n-Si(100) substrates for top sub-cell of silicon based tandem solar cells

AU - Gao, Chunhui

AU - Xu, Ming

AU - Ng, Boon K.

AU - Kang, Liangliang

AU - Jiang, Liangxing

AU - Lai, Yanqing

AU - Liu, Fangyang

PY - 2017/5/15

Y1 - 2017/5/15

N2 - Si-based tandem solar cells have emerged as a promising alternative to replace the current high efficiency silicon single junction solar cells. Sb2S3 is a promising candidates for top cell absorbers due to its suitable band gap, non-toxic and earth-abundant constituent, simple composition, and long term stability. Here, in situ growth of Sb2S3 thin films by radio frequency (RF) reactive sputtering on n-Si(100) substrates is reported. The effects of the growth temperature on morphology, structure, optical and electrical properties of the films were evaluated. The top sub-cell device shows an open circuit voltage (Voc) of 367 mV, indicating the potential to be the top cell of the next generation Si-based tandem solar cells.

AB - Si-based tandem solar cells have emerged as a promising alternative to replace the current high efficiency silicon single junction solar cells. Sb2S3 is a promising candidates for top cell absorbers due to its suitable band gap, non-toxic and earth-abundant constituent, simple composition, and long term stability. Here, in situ growth of Sb2S3 thin films by radio frequency (RF) reactive sputtering on n-Si(100) substrates is reported. The effects of the growth temperature on morphology, structure, optical and electrical properties of the films were evaluated. The top sub-cell device shows an open circuit voltage (Voc) of 367 mV, indicating the potential to be the top cell of the next generation Si-based tandem solar cells.

KW - In situ growth

KW - Reactive sputtering

KW - SbS thin films

KW - Top sub-cells

UR - https://www.scopus.com/pages/publications/85014312355

U2 - 10.1016/j.matlet.2017.02.046

DO - 10.1016/j.matlet.2017.02.046

M3 - 文章

AN - SCOPUS:85014312355

SN - 0167-577X

VL - 195

SP - 186

EP - 189

JO - Materials Letters

JF - Materials Letters

ER -

In situ growth of Sb2S3 thin films by reactive sputtering on n-Si(100) substrates for top sub-cell of silicon based tandem solar cells

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In situ growth of Sb₂S₃ thin films by reactive sputtering on n-Si(100) substrates for top sub-cell of silicon based tandem solar cells