ICRF siliconization in HT-7 superconducting tokamak

Xiangzu Gong; Jiangang Li; Baonian Wan; Yanpin Zhao; Xiaodong Zhang; Xuemao Gu; Chenfu Li; Min Zhen; Yinxian Jie; Shouyin Zhang; Zhenwei Wu

doi:10.1016/S0022-3115(00)00552-3

ICRF siliconization in HT-7 superconducting tokamak

Xiangzu Gong
, Jiangang Li
, Baonian Wan
, Yanpin Zhao
, Xiaodong Zhang
, Xuemao Gu
, Chenfu Li
, Min Zhen
, Yinxian Jie
, Shouyin Zhang
, Zhenwei Wu

电气工程学院

CAS - Institute of Plasma Physics

科研成果: 期刊稿件 › 文章 › 同行评审

16 引用（Scopus）

摘要

A new wall-conditioning method, ICRF plasma-assisted coating with silicon film, the so-called RF-siliconization, has been developed in HT-7 superconducting tokamak. It leads to suppression of carbon and oxygen impurities effectively. The properties of deposits were investigated by X-ray photoelectron spectroscopy (XPS). Silicon atoms have a large sticking probability on the wall and are practically less recycling. Plasma performance has been improved after ICRF siliconization.

源语言	英语
页（从-至）	1171-1175
页数	5
期刊	Journal of Nuclear Materials
卷	290-293
DOI	https://doi.org/10.1016/S0022-3115(00)00552-3
出版状态	已出版 - 3月 2001

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abstract = "A new wall-conditioning method, ICRF plasma-assisted coating with silicon film, the so-called RF-siliconization, has been developed in HT-7 superconducting tokamak. It leads to suppression of carbon and oxygen impurities effectively. The properties of deposits were investigated by X-ray photoelectron spectroscopy (XPS). Silicon atoms have a large sticking probability on the wall and are practically less recycling. Plasma performance has been improved after ICRF siliconization.",

author = "Xiangzu Gong and Jiangang Li and Baonian Wan and Yanpin Zhao and Xiaodong Zhang and Xuemao Gu and Chenfu Li and Min Zhen and Yinxian Jie and Shouyin Zhang and Zhenwei Wu",

year = "2001",

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doi = "10.1016/S0022-3115(00)00552-3",

language = "英语",

volume = "290-293",

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T1 - ICRF siliconization in HT-7 superconducting tokamak

AU - Gong, Xiangzu

AU - Li, Jiangang

AU - Wan, Baonian

AU - Zhao, Yanpin

AU - Zhang, Xiaodong

AU - Gu, Xuemao

AU - Li, Chenfu

AU - Zhen, Min

AU - Jie, Yinxian

AU - Zhang, Shouyin

AU - Wu, Zhenwei

PY - 2001/3

Y1 - 2001/3

N2 - A new wall-conditioning method, ICRF plasma-assisted coating with silicon film, the so-called RF-siliconization, has been developed in HT-7 superconducting tokamak. It leads to suppression of carbon and oxygen impurities effectively. The properties of deposits were investigated by X-ray photoelectron spectroscopy (XPS). Silicon atoms have a large sticking probability on the wall and are practically less recycling. Plasma performance has been improved after ICRF siliconization.

AB - A new wall-conditioning method, ICRF plasma-assisted coating with silicon film, the so-called RF-siliconization, has been developed in HT-7 superconducting tokamak. It leads to suppression of carbon and oxygen impurities effectively. The properties of deposits were investigated by X-ray photoelectron spectroscopy (XPS). Silicon atoms have a large sticking probability on the wall and are practically less recycling. Plasma performance has been improved after ICRF siliconization.

UR - https://www.scopus.com/pages/publications/17344387873

U2 - 10.1016/S0022-3115(00)00552-3

DO - 10.1016/S0022-3115(00)00552-3

M3 - 文章

AN - SCOPUS:17344387873

SN - 0022-3115

VL - 290-293

SP - 1171

EP - 1175

JO - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

ER -

ICRF siliconization in HT-7 superconducting tokamak

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