TY - GEN
T1 - Homoepitaxial growth of high quality thick diamond film with microwave plasma CVD technique
AU - Wang, Hong Xing
AU - Ishigaki, Noritaka
AU - Ohkawa, Toshiki
AU - Kokami, Shinichi
AU - Inoue, Hideo
AU - Terajima, Ryuuichi
AU - Mutoh, Katsuhiko
AU - Kotaki, Toshiro
PY - 2011
Y1 - 2011
N2 - A growth of high quality thick diamond film has been carried out on high pressure and high temperature diamond substrate by microwave plasma chemical vapor deposition system. First, the effect of growth parameters on the growth film morphologies was investigated, indicating that the diamond film is very sensitive to the growth temperature and input microwave power. Then, sample holders with different geometries were used in our experiment, illustrating that high quality diamond film can be grown by using the sample holder with flat surface. Finally, the characterization of the as grown samples has been carried out.
AB - A growth of high quality thick diamond film has been carried out on high pressure and high temperature diamond substrate by microwave plasma chemical vapor deposition system. First, the effect of growth parameters on the growth film morphologies was investigated, indicating that the diamond film is very sensitive to the growth temperature and input microwave power. Then, sample holders with different geometries were used in our experiment, illustrating that high quality diamond film can be grown by using the sample holder with flat surface. Finally, the characterization of the as grown samples has been carried out.
UR - https://www.scopus.com/pages/publications/80053225372
U2 - 10.1557/opl.2011.445
DO - 10.1557/opl.2011.445
M3 - 会议稿件
AN - SCOPUS:80053225372
SN - 9781605112596
T3 - Materials Research Society Symposium Proceedings
SP - 23
EP - 29
BT - Diamond Electronics and Bioelectronics - Fundamentals to Applications IV
T2 - 2010 MRS Fall Meeting
Y2 - 29 November 2010 through 3 December 2010
ER -