High-temperature Electrical Characteristics of JBS-integrated 4H-SiC MOSFETs

SiC-based devices have good high-temperature operating characteristics and are suitable for operating in extreme environments. For 4H-SiC JBS-integrated MOSFETs, analysis of electrical performance at high temperatures, especially above 450K, is very necessary and urgent. In this work, three 1.2 kV junction barrier Schottky diode (JBS) integrated MOSFETs (JBSFETs) were fabricated with different junction lengths. The static and dynamic performances are evaluated and analyzed over a temperature range of 300 K - 575 K. At room temperature, a longer Schottky junction length of JBSFETs will result in larger leakage current and a smaller reverse conduction voltage drop. Over the temperature range of 450K to 575K, the reverse conduction voltage drop of the three devices tends to be stable with the increase in temperature, in contrast, the reverse recovery charge increases rapidly with the increase in temperature. This means that the PIN body diodes of the JBSFETs are more likely to conduct over this temperature range. Our measurements and analysis show important guidance for the design and applications of SiC power devices, especially at high temperatures.