TY - JOUR
T1 - High Stability and Ultralow Threshold Amplified Spontaneous Emission from Formamidinium Lead Halide Perovskite Films
AU - Yuan, Fang
AU - Wu, Zhaoxin
AU - Dong, Hua
AU - Xi, Jun
AU - Xi, Kai
AU - Divitini, Giorgio
AU - Jiao, Bo
AU - Hou, Xun
AU - Wang, Shufeng
AU - Gong, Qihuang
N1 - Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/7/20
Y1 - 2017/7/20
N2 - The opportunity of lasing from organolead halide perovskite materials has recently attracted extensive attention in order to realize electrically driven lasers. So far, for devices with planar structure, most reports focus on CH3NH3PbI3 (MAPbI3) films, which are unstable when in operation due to phase transitions and elemental redistribution. Herein, we demonstrate highly stable amplified spontaneous emission (ASE) with ultralow threshold from formamidinium-based perovskite CH(NH2)2PbI3 (FAPbI3) films. ASE from MABr-stabilized FAPbI3 films was also achieved, with an ultralow threshold of about 1.6 μJ/cm2. More importantly, upon continuous operation under pulsed laser for several hours, the ASE intensity in the MAPbI3 film decreased to 9% of the initial value, while it was maintained above 90% in the FAPbI3 film. The low trap density, smooth film morphology, high thermal stability, and the excitonic emission in nature of the FAPbI3 film are expected to contribute to its low lasing threshold and high stability, demonstrating a strong potential for applications in continuous-wave pumped lasers and electrically driven lasers. (Graph Presented).
AB - The opportunity of lasing from organolead halide perovskite materials has recently attracted extensive attention in order to realize electrically driven lasers. So far, for devices with planar structure, most reports focus on CH3NH3PbI3 (MAPbI3) films, which are unstable when in operation due to phase transitions and elemental redistribution. Herein, we demonstrate highly stable amplified spontaneous emission (ASE) with ultralow threshold from formamidinium-based perovskite CH(NH2)2PbI3 (FAPbI3) films. ASE from MABr-stabilized FAPbI3 films was also achieved, with an ultralow threshold of about 1.6 μJ/cm2. More importantly, upon continuous operation under pulsed laser for several hours, the ASE intensity in the MAPbI3 film decreased to 9% of the initial value, while it was maintained above 90% in the FAPbI3 film. The low trap density, smooth film morphology, high thermal stability, and the excitonic emission in nature of the FAPbI3 film are expected to contribute to its low lasing threshold and high stability, demonstrating a strong potential for applications in continuous-wave pumped lasers and electrically driven lasers. (Graph Presented).
UR - https://www.scopus.com/pages/publications/85025462459
U2 - 10.1021/acs.jpcc.7b02101
DO - 10.1021/acs.jpcc.7b02101
M3 - 文章
AN - SCOPUS:85025462459
SN - 1932-7447
VL - 121
SP - 15318
EP - 15325
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 28
ER -