High-speed optical modulation via reversible phase switching in PIN–PMN–PT single crystals

Optical scattering caused by ferroelectric–ferroelastic domain walls severely limits the electro-optical performance of PMN–PT-based crystals. Poling of the crystals with compositions near the rhombohedral–orthorhombic phase transition temperature can suppress these scattering domain walls and enhance optical transmission. However, this method requires a high-temperature poling pre-treatment, complicating device fabrication. Here, we systematically investigate electric-field-driven domain switching mechanisms in PIN–PMN–30PT single crystals under an electric field applied along [ 110 ] and introduce a treatment protocol that enables fully reversible switching between a multi-domain rhombohedral state and a single-domain orthorhombic “1O” state at room temperature. The state switching time is approximately 15 μs and can be achieved under a relatively low operating electric field, which is lower than the conventional poling field of 0.7 kV/mm reported for PIN–PMN–PT crystals. Based on this discovery, we demonstrated a low-power, room-temperature, and fast optical modulation method via domain/phase switching in transparent ferroelectrics, establishing a practical pathway to achieve next-generation optical modulators.