跳到主要导航 跳到搜索 跳到主要内容

High-Performance Hole Transport and Quasi-Balanced Ambipolar OFETs Based on D–A–A Thieno-benzo-isoindigo Polymers

  • David Ian James
  • , Suhao Wang
  • , Wei Ma
  • , Svante Hedström
  • , Xiangyi Meng
  • , Petter Persson
  • , Simone Fabiano
  • , Xavier Crispin
  • , Mats R. Andersson
  • , Magnus Berggren
  • , Ergang Wang

科研成果: 期刊稿件文章同行评审

33 引用 (Scopus)

摘要

Two new conjugated polymers are synthesized based on a novel donor–acceptor–acceptor (D–A–A) design strategy with the intention of attaining lower lowest unoccupied molecular obital levels compared to the normally used D–A strategy. By coupling two thieno-benzo-isoindigo units together via the phenyl position to give a new symmetric benzene-coupled di-thieno-benzo-isoindigo (BdiTBI) monomer as an A–A acceptor and thiophene (T) or bithiophene (2T) as a donor, two new polymers PT-BdiTBI and P2T-BdiTBI are synthesized via Stille coupling. The two polymers are tested in top gate and top contact field effect transistors, which exhibit balanced ambipolar charge transport properties with poly(methyl methacrylate) as dielectric and a high hole mobility up to 1.1 cm2 V–1 s–1 with poly(trifluoroethylene) as dielectric. The polymer films are investigated using atomic force microscopy, which shows fibrous features due to their high crystallinity as indicated by grazing incidence wide-angle X-ray scattering. The theoretical calculations agree well with the experimental data on the energy levels. It is demonstrated that the D–A–A strategy is very effective for designing low band gap polymers for organic electronic applications.

源语言英语
文章编号1500313
期刊Advanced Electronic Materials
2
4
DOI
出版状态已出版 - 4月 2016

学术指纹

探究 'High-Performance Hole Transport and Quasi-Balanced Ambipolar OFETs Based on D–A–A Thieno-benzo-isoindigo Polymers' 的科研主题。它们共同构成独一无二的指纹。

引用此