TY - GEN
T1 - High-Performance and Reliability-Enhanced β-Ga2O3 Trench Schottky Barrier Diodes with Ion-Implantation Shielding Layer
AU - Li, Ming
AU - Wen, Zhang
AU - Jiang, Zugui
AU - Yang, Songquan
AU - Mao, Bangyao
AU - Bi, Weizhe
AU - Zhou, Leidang
AU - Yang, Mingchao
AU - Hao, Yue
AU - Geng, Li
N1 - Publisher Copyright:
© 2026 IEEE.
PY - 2026
Y1 - 2026
N2 - In this paper, a reliable ion-implantation shielded β-Ga2O3 trench Schottky barrier diode (TSBD) is demonstrated. By replacing the trench-sidewall MOS capacitor with a multi-energy nitrogen ion-implantation layer, the fabricated TSBD eliminates the sidewall depletion effect to expand the current conduction path and lower the specific on-resistance (Ron,sp), while also forming a high-resistivity region that shields the Schottky interfaces to mitigate electric field crowding and reverse leakage. The fabricated TSBD achieves a high breakdown voltage (Vbr) of 2.77 kV, a low Ron,sp of 7.32 mΩ·cm2, and a Baliga's figure-of-merit (BFOM) exceeding 1 GW/cm2. The robust stability of the TSBD has been comprehensively evaluated for reliability, including high current forward bias stress, off state stress, and multiple thermal cycles up to 600 K, confirmed the robust stability of the device. This work confirms that ion implantation shielding technology is a feasible path for developing high-performance and high reliability β-Ga2O3 trench power diodes.
AB - In this paper, a reliable ion-implantation shielded β-Ga2O3 trench Schottky barrier diode (TSBD) is demonstrated. By replacing the trench-sidewall MOS capacitor with a multi-energy nitrogen ion-implantation layer, the fabricated TSBD eliminates the sidewall depletion effect to expand the current conduction path and lower the specific on-resistance (Ron,sp), while also forming a high-resistivity region that shields the Schottky interfaces to mitigate electric field crowding and reverse leakage. The fabricated TSBD achieves a high breakdown voltage (Vbr) of 2.77 kV, a low Ron,sp of 7.32 mΩ·cm2, and a Baliga's figure-of-merit (BFOM) exceeding 1 GW/cm2. The robust stability of the TSBD has been comprehensively evaluated for reliability, including high current forward bias stress, off state stress, and multiple thermal cycles up to 600 K, confirmed the robust stability of the device. This work confirms that ion implantation shielding technology is a feasible path for developing high-performance and high reliability β-Ga2O3 trench power diodes.
KW - high breakdown voltage
KW - high current stress
KW - high temperature stress
KW - ion-implantation shielded layer
KW - OFF-state stress
KW - trench Schottky barrier diode
KW - β-GaO
UR - https://www.scopus.com/pages/publications/105042638799
U2 - 10.1109/ISPSD64561.2026.11553706
DO - 10.1109/ISPSD64561.2026.11553706
M3 - 会议稿件
AN - SCOPUS:105042638799
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 261
EP - 264
BT - 2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2026
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 38th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2026
Y2 - 24 May 2026 through 28 May 2026
ER -