TY - GEN
T1 - High-isolation MEMS capacitive shunt switch
AU - Yi, Zhang
AU - Onodera, Kazumasa
AU - Maeda, Ryutaro
PY - 2005
Y1 - 2005
N2 - Many efforts have been made to find materials with high dielectric constant for the application of RF capacitive shunt switch in order to obtain large down-state capacitance and therefore high isolation. In this work, HfO 2 dielectric was suggested for the application of RF shunt switch. The HfO2 dielectric prepared in this work had the breakdown field higher than 20 MV/cm. The RF switch using 45-n.ra-thick HfO2 dielectric showed excellent performance. Its insertion loss is lower than 0.8 dB until 50 GHz at the up-state position. Its isolation is higher than 30 dB until 50 GHz at the down-state, particularly, higher than 50 dB in the range of 10-15GHz.
AB - Many efforts have been made to find materials with high dielectric constant for the application of RF capacitive shunt switch in order to obtain large down-state capacitance and therefore high isolation. In this work, HfO 2 dielectric was suggested for the application of RF shunt switch. The HfO2 dielectric prepared in this work had the breakdown field higher than 20 MV/cm. The RF switch using 45-n.ra-thick HfO2 dielectric showed excellent performance. Its insertion loss is lower than 0.8 dB until 50 GHz at the up-state position. Its isolation is higher than 30 dB until 50 GHz at the down-state, particularly, higher than 50 dB in the range of 10-15GHz.
UR - https://www.scopus.com/pages/publications/33847259771
M3 - 会议稿件
AN - SCOPUS:33847259771
SN - 0780391284
SN - 9780780391284
T3 - MAPE2005: IEEE 2005 International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, Proceedings
SP - 228
EP - 231
BT - MAPE2005
T2 - MAPE2005: IEEE 2005 International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications
Y2 - 8 August 2005 through 12 August 2005
ER -